MCQ in Solid State Devices Part 1 – Answers

Below are the answers key for the Multiple Choice Questions in Solid State Devices/Circuit – MCQs Part 1

1. 1

2. 18

3. As voltage controlled capacitance

4. Because of the centrifugal or outward force created by their orbital motion.

5. More slowly

6. Common base

7. Intrinsic semiconductor

8. Outer orbit

9. First orbit

10. 2 Mv

11. Piecewise linear model

12. Diffusion and drift

13. Four

14. Valence orbit

15. Conductor

16. 8

17. Twice the peak

18. The forward bias capacitance of a diode

19. The number of electrons in the valence orbit

20. 8

21. Free electron

22. If every atom in the crystal is a silicon atom

23. Insulator

24. Doped semiconductor

25. Diffusion

26. Peak amplitude

27. P-type semiconductor

28. N-type semiconductor

29. Junction diode

30. Trivalent atom

31. Pentavalent atom

32. Majority carriers

33. minority carriers

34. 0.3 V

35. 0.7 V

36. Dipole

37. Decreases

38. Higher reverse voltages

39. High-field emission

40. Intensity of the electric field

41. Junction temperature

42. Gate voltage

43. Forward current

44. Reverse breakdown voltage

45. Tunnel diode

46. Digital computers

47. Its current is not directly proportional to its voltage

48. Bulk resistance

49. Less than 1Ω

50. Transition region capacitance

The Series

Following is the list of multiple choice questions in this brand new series:

Complete List of MCQs in Electronics Engineering per topic

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