# MCQ in Solid State Devices Part 2 | ECE Board Exam

(Last Updated On: July 27, 2018)

This is the Multiples Choice Questions Part 2 of the Series in Solid State Devices/Circuits as one of the Electronics Engineering topic. In Preparation for the ECE Board Exam make sure to expose yourself and familiarize in each and every questions compiled here taken from various sources including but not limited to past Board Exam Questions in Electronics Engineering field, Electronics Books, Journals and other Electronics References.

### MCQ Topic Outline included in ECE Board Exam Syllabi

• MCQs in Semiconductor Fundamentals
• MCQs in Transistor Components
• MCQs in Circuit Analysis and Design
• MCQs in Special Services (Photo Electric, Photo voltaic)

### Continue Practice Exam Test Questions Part 2 of the Series

Choose the letter of the best answer in each questions.

51. The time taken by the diode to operate in the reversed condition from forward conduction.

A. Maximum power time

B. Reverse recovery time

D. Time allocation

Solution:

52. Approximately, the atomic weight of germanium is

A. 32

B. 28.09

C. 72.7

D. 16

Solution:

53. Atomic weight of silicon at 300 K is

A. 28.09

B. 72.7

C. 5.32

D. 16

Solution:

54. An LED and phototransistor is equivalent to a/an

A. Thermocouple

B. FET

C. Optocoupler

D. Regulator

Solution:

55. Optocoupler is otherwise known as

A. Laser

B. Photodiodes

C. Optoisolator

D. Photoconductive cell

Solution:

56. When the emitter junction is forward biased while the collector junction is reverse biased, the transistor is at ________ region.

A. Cut-off

B. Saturation

C. Active

D. Breakdown

Solution:

57. When both emitter and collector junction are forward biased, the transistor is said to be at _________ region.

A. Active

B. Cut-off

C. Breakdown

D. Saturation

Solution:

58. An equivalent circuit of a diode in which it is represented as a switch in series with a barrier potential.

A. First approximation

B. Second approximation

C. Third approximation

D. Fourth approximation

Solution:

59. Which of the following is the equivalent circuit for a diode for third approximation?

A. A switch only

B. A switch in series with a battery in series with a resistance

C. A switch in series with battery

D. A switch in series with a resistance

Solution:

60. A silicon crystal is a/an ___________ of a semiconductor if every atom in the crystal is a silicon atom.

A. Extrinsic

B. Intrinsic

C. P-type

D. N-type

Solution:

61. With pnp voltage divider bias, you must use

A. Ground

B. Negative power supplies

C. Positive power supplies

D. Resistors

Solution:

62. Two pn silicon diodes are connected in series opposing. A 5 V voltage is impressed upon them. Find the voltage across each junction at room temperature when nVT= 0.052 V.

A. 0.236 V, 3.2 V

B. 4.764 V, 0.236 V

C. 0.036 V, 4.964 V

D. 3.21 V, 1.79 V

Solution:

63. A half-wave signal has a period of

A. 16.7 ms

B. 8.3 ms

C. 16.7 µs

D. 8.3 µs

Solution:

64. A full-wave signal has a period of

A. 16.7 µs

B. 8.3 µs

C. 8.3 ms

D. 16.7 ms

Solution:

65. When doping increases, ________ of a semiconductor decreases.

A. Impurity

B. Conductivity

C. Bulk resistance

D. Minority carrier

Solution:

66. Which of the following has the least noise level?

A. FET

B. BJT

C. Triode

D. Tetrode

Solution:

67. Which of the following has the highest input impedance

A. FET

B. BJT

C. MOSFET

D. Crystal diode

Solution:

68. The frequency of a half-wave signal is

A. Twice the line frequency

B. Equal to the line frequency

C. One-half of the line frequency

D. One-fourth the line frequency

Solution:

69. For a full-wave rectifier, the output frequency

A. Equals one-half the input frequency

B. Equals the line frequency

C. Equals two times the input

D. Is three times the line frequency

Solution:

70. The averaged dc voltage of a half wave rectifier circuit is _________ of the value of the peak input voltage.

A. 63.6%

B. 31.8%

C. 4.8%

D. 6.2%

Solution:

71. The average dc voltage of a full wave rectifier circuit is __________ of the value of the peak input voltage.

A. 31.8%

B. 48.1%

C. 63.6%

D. 1%

Solution:

72. Typical leakage current in a pn junction is in the order of

A. µA

B. mA

C. nA

D. pA

Solution:

73. The resistance of a forward biased pn junction is in the order of

A. Ω

B. mΩ

C. µΩ

D. kΩ

Solution:

74. The removal by electronic means of one extremity of an input waveform is called ________.

A. Filtering

B. Clamping

C. Amplifying

D. Clipping

Solution:

75. Which of the choices below does not describe a clipper circuit?

A. Limiter

B. Amplitude selector

C. Slicer

D. Baseline stabilizer

Solution:

76. The varactor diode is also called as

A. Voltage-variable capacitance

B. Varicap

C. Epicap

D. All of these

Solution:

77. What diode has no depletion layer

A. Varactor

B. Varistor

C. Schottky diode

D. Shockley diode

Solution:

78. Varistors are used for line filtering to eliminate spikes and dips and is also called

A. Transient regulator

B. Transient limiter

C. Transient filter

D. Transient suppressor

Solution:

79. Defined as random motion of holes and free electrons due to thermal agitation

A. Fission

B. Fusion

C. Diffusion

D. Ionization

Solution:

80. The temperature coefficient of resistance of a semiconductor is

A. Positive

B. Negative

C. Zero

D. Infinity

Solution:

81. A large signal amplifier which is biased so that collector current flow continuously during the complete electrical cycle of the signal as well as when no signal is present

A. Class A

B. Class B

C. Class AB

D. Class C

Solution:

82. A large signal amplifier which is biased so that current is non zero for less than one-half cycle.

A. Class AB

B. Class C

C. Class A

D. Class B

Solution:

83. A class __________ amplifier stage operates with a small forward bias of the transistor so that some collector current flows at all times

A. A

B. B

C. AB

D. C

Solution:

84. What factor is shown on a data sheet that tells how much you have to reduce the power of a device?

A. Power factor

B. Derating factor

C. Reactive factor

D. Reduction factor

Solution:

85. The time it takes to turn off a forward-biased diode is called the

A. Forward recovery time

B. Reverse recovery time

C. Recombination

D. Turn-off time

Solution:

86. A heavily doped semiconductor has

A. High resistance

B. No effect on the semiconductor characteristics

C. More heat dissipation

D. Low resistance

Solution:

87. Gallium arsenide, aluminum arsenide and gallium phosphide are classified as

A. Elementary semiconductor

B. Secondary semiconductor

C. Intrinsic material made by doping

D. Insulators

Solution:

88. A lightly doped semiconductor has

A. Low resistance

B. High resistance

C. No effect on a semiconductor

D. More heat dissipated behaviors

Solution:

89. The property or ability of a material to support charge flow or electron flow

A. Resistance

B. Conductance

C. Resistivity

D. Permeance

Solution:

90. What is also known as photodiffusion effect?

A. Dember effect

B. Skin effect

C. Destriau effect

D. Night effect

Solution:

91. An effect that occurs within the entire bulk of a semiconductor material rather than in a localized region or junction

A. Silicon effect

B. Dember effect

C. Bulk effect

D. Destriau effect

Solution:

92. The creation voltage in a conductor or semiconductor by illumination of one surface

A. Dember effect

B. Skin effect

C. Destriau effect

D. Night effect

Solution:

93. What device uses a material catwhisker as its anode and is classified as a hot-carrier diode?

A. PIN

B. Point-contact diode

C. Shockley diode

D. Crystal diode

Solution:

94. What is the typical operating current of an LED?

A. 50 mA

B. 10 mA

C. 20 mA

D. 5 mA

Solution:

95. At absolute zero temperature, a semiconductor behaves as a/an

A. Good conductor

B. Superconductor

C. Insulator

D. Variable resistor

Solution:

96. Avalanche breakdown in a semiconductor takes place

A. When forward current exceeds a certain value

B. When potential barrier is reduced to zero

C. When reverse bias exceeds a certain value

D. When forward bias exceeds a certain value

Solution:

97. A cold-cathode glow-discharge diode having a copper anode and a large cathode of sodium or other material.

A. Tunnel diode

B. BARITT diode

C. Anotron

Solution:

98. A microwave diode in which the carriers that transverse the drift region are generated by minority carrier injection from a forward-biased junction instead of being extracted from the plasma of an avalanche region.

A. IMPATT

B. TRAPAT

C. BARITT diode

D. Esaki diode

Solution:

99. What electronic circuit converts AC to DC where the DC output peak value can be greater than the AC input peak value?

A. Voltage multiplier

B. Rectifier

C. Clamper

D. Clipper

Solution:

100. Which of the item below does not mean a VARACTOR diode?

A. VOLTACAPS

B. VARICAPS

C. Voltage variable capacitors

D. Variable resistance diode

Solution:

### Questions and Answers in Solid State Devices

Following is the list of practice exam test questions in this brand new series:

MCQ in Solid State Devices
PART 1: MCQs from Number 1 – 50                        Answer key: PART 1
PART 2: MCQs from Number 51 – 100                   Answer key: PART 2
PART 3: MCQs from Number 101 – 150                 Answer key: PART 3
PART 4: MCQs from Number 151 – 200                 Answer key: PART 4
PART 5: MCQs from Number 201 – 250                 Answer key: PART 5
PART 6: MCQs from Number 251 – 300                 Answer key: PART 6
PART 7: MCQs from Number 301 – 350                 Answer key: included
PART 8: MCQs from Number 351 – 400                 Answer key: included
PART 9: MCQs from Number 401 – 450                 Answer key: included
PART 10: MCQs from Number 451 – 500                 Answer key: included

### Complete List of MCQ in Electronics Engineering per topic

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