MCQs in Solid State Devices Part II

(Last Updated On: December 8, 2017)

Solid State Devices - MCQs Part II

This is the Multiples Choice Questions Part 2 of the Series in Solid State Devices/Circuits as one of the Electronics Engineering topic. In Preparation for the ECE Board Exam make sure to expose yourself and familiarize in each and every questions compiled here taken from various sources including but not limited to past Board Exam Questions in Electronics Engineering field, Electronics Books, Journals and other Electronics References.

Multiple Choice Questions Topic Outline

  • MCQs in Semiconductor Fundamentals
  • MCQs in Transistor Components
  • MCQs in Circuit Analysis and Design
  • MCQs in Special Services (Photo Electric, Photo voltaic)

The Series

Following is the list of multiple choice questions in this brand new series:

Solid State Devices MCQs
PART 1: MCQs from Number 1 – 50                        Answer key: PART I
PART 2: MCQs from Number 51 – 100                   Answer key: PART II
PART 3: MCQs from Number 101 – 150                 Answer key: PART III
PART 4: MCQs from Number 151 – 200                 Answer key: PART IV
PART 5: MCQs from Number 201 – 250                 Answer key: PART V
PART 6: MCQs from Number 251 – 300                 Answer key: PART VI

Continue Practice Exam Test Questions Part 2 of the Series

51. The time taken by the diode to operate in the reversed condition from forward conduction.

  • A. Maximum power time
  • B. Reverse recovery time
  • C. Lifetime
  • D. Time allocation

52. Approximately, the atomic weight of germanium is

  • A. 32
  • B. 28.09
  • C. 72.7
  • D. 16

53. Atomic weight of silicon at 300 K is

  • A. 28.09
  • B. 72.7
  • C. 5.32
  • D. 16

54. An LED and phototransistor is equivalent to a/an

  • A. Thermocouple
  • B. FET
  • C. Optocoupler
  • D. Regulator

55. Optocoupler is otherwise known as

  • A. Laser
  • B. Photodiodes
  • C. Optoisolator
  • D. Photoconductive cell

56. When the emitter junction is forward biased while the collector junction is reverse biased, the transistor is at ________ region.

  • A. Cut-off
  • B. Saturation
  • C. Active
  • D. Breakdown

57. When both emitter and collector junction are forward biased, the transistor is said to be at _________ region.

  • A. Active
  • B. Cut-off
  • C. Breakdown
  • D. Saturation

58. An equivalent circuit of a diode in which it is represented as a switch in series with a barrier potential.

  • A. First approximation
  • B. Second approximation
  • C. Third approximation
  • D. Fourth approximation

59. Which of the following is the equivalent circuit for a diode for third approximation?

  • A. A switch only
  • B. A switch in series with a battery in series with a resistance
  • C. A switch in series with battery
  • D. A switch in series with a resistance

60. A silicon crystal is a/an ___________ of a semiconductor if every atom in the crystal is a silicon atom.

  • A. Extrinsic
  • B. Intrinsic
  • C. P-type
  • D. N-type

61. With pnp voltage divider bias, you must use

  • A. Ground
  • B. Negative power supplies
  • C. Positive power supplies
  • D. Resistors

62. Two pn silicon diodes are connected in series opposing. A 5 V voltage is impressed upon them. Find the voltage across each junction at room temperature when nVT= 0.052 V.

  • A. 0.236 V, 3.2 V
  • B. 4.764 V, 0.236 V
  • C. 0.036 V, 4.964 V
  • D. 3.21 V, 1.79 V

63. A half-wave signal has a period of

  • A. 16.7 ms
  • B. 8.3 ms
  • C. 16.7 µs
  • D. 8.3 µs

64. A full-wave signal has a period of

  • A. 16.7 µs
  • B. 8.3 µs
  • C. 8.3 ms
  • D. 16.7 ms

65. When doping increases, ________ of a semiconductor decreases.

  • A. Impurity
  • B. Conductivity
  • C. Bulk resistance
  • D. Minority carrier

66. Which of the following has the least noise level?

  • A. FET
  • B. BJT
  • C. Triode
  • D. Tetrode

67. Which of the following has the highest input impedance

  • A. FET
  • B. BJT
  • C. MOSFET
  • D. Crystal diode

68. The frequency of a half-wave signal is

  • A. Twice the line frequency
  • B. Equal to the line frequency
  • C. One-half of the line frequency
  • D. One-fourth the line frequency

69. For a full-wave rectifier, the output frequency

  • A. Equals one-half the input frequency
  • B. Equals the line frequency
  • C. Equals two times the input
  • D. Is three times the line frequency

70. The averaged dc voltage of a half wave rectifier circuit is _________ of the value of the peak input voltage.

  • A. 63.6%
  • B. 31.8%
  • C. 4.8%
  • D. 6.2%

71. The average dc voltage of a full wave rectifier circuit is __________ of the value of the peak input voltage.

  • A. 31.8%
  • B. 48.1%
  • C. 63.6%
  • D. 1%

72. Typical leakage current in a pn junction is in the order of

  • A. µA
  • B. mA
  • C. nA
  • D. pA

73. The resistance of a forward biased pn junction is in the order of

  • A. Ω
  • B. mΩ
  • C. µΩ
  • D. kΩ

74. The removal by electronic means of one extremity of an input waveform is called ________.

  • A. Filtering
  • B. Clamping
  • C. Amplifying
  • D. Clipping

75. Which of the choices below does not describe a clipper circuit?

  • A. Limiter
  • B. Amplitude selector
  • C. Slicer
  • D. Baseline stabilizer

76. The varactor diode is also called as

  • A. Voltage-variable capacitance
  • B. Varicap
  • C. Epicap
  • D. All of the above

77. What diode has no depletion layer

  • A. Varactor
  • B. Varistor
  • C. Schottky diode
  • D. Shockley diode

78. Varistors are used for line filtering to eliminate spikes and dips and is also called

  • A. Transient regulator
  • B. Transient limiter
  • C. Transient filter
  • D. Transient suppressor

79. Defined as random motion of holes and free electrons due to thermal agitation

  • A. Fission
  • B. Fusion
  • C. Diffusion
  • D. Ionization

80. The temperature coefficient of resistance of a semiconductor is

  • A. Positive
  • B. Negative
  • C. Zero
  • D. Infinity

81. A large signal amplifier which is biased so that collector current flow continuously during the complete electrical cycle of the signal as well as when no signal is present

  • A. Class A
  • B. Class B
  • C. Class AB
  • D. Class C

82. A large signal amplifier which is biased so that current is non zero for less than one-half cycle.

  • A. Class AB
  • B. Class C
  • C. Class A
  • D. Class B

83. A class ____ amplifier stage operates with a small forward bias of the transistor so that some collector current flows at all times

  • A. A
  • B. B
  • C. AB
  • D. C

84. What factor is shown on a data sheet that tells how much you have to reduce the power of a device?

  • A. Power factor
  • B. Derating factor
  • C. Reactive factor
  • D. Reduction factor

85. The time it takes to turn off a forward-biased diode is called the

  • A. Forward recovery time
  • B. Reverse recovery time
  • C. Recombination
  • D. Turn-off time

86. A heavily doped semiconductor has

  • A. High resistance
  • B. No effect on the semiconductor characteristics
  • C. More heat dissipation
  • D. Low resistance

87. Gallium arsenide, aluminum arsenide and gallium phosphide are classified as

  • A. Elementary semiconductor
  • B. Secondary semiconductor
  • C. Intrinsic material made by doping
  • D. Insulators

88. A lightly doped semiconductor has

  • A. Low resistance
  • B. High resistance
  • C. No effect on a semiconductor
  • D. More heat dissipated behaviors

89. The property or ability of a material to support charge flow or electron flow

  • A. Resistance
  • B. Conductance
  • C. Resistivity
  • D. Permeance

90. What is also known as photodiffusion effect?

  • A. Dember effect
  • B. Skin effect
  • C. Destriau effect
  • D. Night effect

91. An effect that occurs within the entire bulk of a semiconductor material rather than in a localized region or junction

  • A. Silicon effect
  • B. Dember effect
  • C. Bulk effect
  • D. Destriau effect

92. The creation voltage in a conductor or semiconductor by illumination of one surface

  • A. Dember effect
  • B. Skin effect
  • C. Destriau effect
  • D. Night effect

93. What device uses a material catwhisker as its anode and is classified as a hot-carrier diode?

  • A. PIN
  • B. Point-contact diode
  • C. Shockley diode
  • D. Crystal diode

94. What is the typical operating current of an LED?

  • A. 50 mA
  • B. 10 mA
  • C. 20 mA
  • D. 5 mA

95. At absolute zero temperature, a semiconductor behaves as a/an

  • A. Good conductor
  • B. Superconductor
  • C. Insulator
  • D. Variable resistor

96. Avalanche breakdown in a semiconductor takes place

  • A. When forward current exceeds a certain value
  • B. When potential barrier is reduced to zero
  • C. When reverse bias exceeds a certain value
  • D. When forward bias exceeds a certain value

97. A cold-cathode glow-discharge diode having a copper anode and a large cathode of sodium or other material.

  • A. Tunnel diode
  • B. BARITT diode
  • C. Anotron
  • D. READ diode

98. A microwave diode in which the carriers that transverse the drift region are generated by minority carrier injection from a forward-biased junction instead of being extracted from the plasma of an avalanche region.

  • A. IMPATT
  • B. TRAPAT
  • C. BARITT diode
  • D. Esaki diode

99. What electronic circuit converts AC to DC where the DC output peak value can be greater than the AC input peak value?

  • A. Voltage multiplier
  • B. Rectifier
  • C. Clamper
  • D. Clipper

100. Which of the item below does not mean a VARACTOR diode?

  • A. VOLTACAPS
  • B. VARICAPS
  • C. Voltage variable capacitors
  • D. Variable resistance diode

Complete List of MCQs in Electronics Engineering per topic

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MCQs in Solid State Devices Part II
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