MCQs in Solid State Devices Part III

(Last Updated On: December 8, 2017)

Solid State Devices - MCQs Part III

This is the Multiples Choice Questions Part 3 of the Series in Solid State Devices/Circuits as one of the Electronics Engineering topic. In Preparation for the ECE Board Exam make sure to expose yourself and familiarize in each and every questions compiled here taken from various sources including but not limited to past Board Exam Questions in Electronics Engineering field, Electronics Books, Journals and other Electronics References.

Multiple Choice Questions Topic Outline

  • MCQs in Semiconductor Fundamentals
  • MCQs in Transistor Components
  • MCQs in Circuit Analysis and Design
  • MCQs in Special Services (Photo Electric, Photo voltaic)

The Series

Following is the list of multiple choice questions in this brand new series:

Solid State Devices MCQs
PART 1: MCQs from Number 1 – 50                        Answer key: PART I
PART 2: MCQs from Number 51 – 100                   Answer key: PART II
PART 3: MCQs from Number 101 – 150                 Answer key: PART III
PART 4: MCQs from Number 151 – 200                 Answer key: PART IV
PART 5: MCQs from Number 201 – 250                 Answer key: PART V
PART 6: MCQs from Number 251 – 300                 Answer key: PART VI

Continue Practice Exam Test Questions Part 3 of the Series

101. What is the charge of the hole?

  • A. Equal to that of a proton
  • B. Equal to that of an electron
  • C. Equal to that of a neutron
  • D. Equal to zero

102. It is the current gain for the common-emitter configuration

  • A. α
  • B. β
  • C. δ
  • D. ρ

103. when a factor a junction transistor is 0.98,the factor would be equivalent to ______ value of transistor’s beta.

  • A. 49
  • B. 60
  • C. 20
  • D. 38

104. An emitter resistor is used for ________ in most amplifier circuits.

  • A. Temperature stabilization
  • B. Biasing a bipolar junction transistor
  • C. Current limitation
  • D. Voltage amplification

105. What line is drawn between the open-circuit current on a JFET characteristic curve?

  • A. Operating point
  • B. Load line
  • C. Tangent line
  • D. Quiescent point

106. Which of the choices below is another name for a photoconductive cell?

  • A. Varicap
  • B. Varistor
  • C. Photoresistive device
  • D. Photodiode

107. When both emitter and collector junctions are reverse biased, the transistor is said to be at _______ region.

  • A. Active
  • B. Cut-off
  • C. Saturation
  • D. Amplifying

108. What type of diode is used for tuning receivers and is normally operated with reverse bias and derived its name from voltage variable capacitor?

  • A. Hot-carrier diode
  • B. Varactor diode
  • C. Tunnel diode
  • D. Zener diode

109. What silicon npn tetrode serves as bistable negative-resistance device?

  • A. BJT
  • B. Binistor
  • C. FET
  • D. Thermistor

110. A multiple-terminal solid-state device similar to a transistor that generates frequencies up to about 10000 MHz by injecting electrons or holes into a space-charge layer which rapidly forces these carriers to a collecting electrode.

  • A. Magnetron
  • B. IMPATT
  • C. Klystron
  • D. Spacistor

111. Which of the items below is not a good conductor?

  • A. Electrolytes
  • B. Ionized gases
  • C. Silicon
  • D. Silver

112. What is the net charge if a certain semiconductor losses 4 valence electrons?

  • A. +4
  • B. -4
  • C. +8
  • D. -8

113. What is the net charge if a certain semiconductor gains one valence electron?

  • A. +1
  • B. -1
  • C. +4
  • D. -4

114. What is the approximate voltage drop of LED?

  • A. 0.3 V
  • B. 0.7 V
  • C. 1.5 V
  • D. 3.8 V

115. Under standard conditions, pure germanium has a resistivity of

  • A. 60 Ω-cm
  • B. 60 Ω-m
  • C. 60 Ω-mm
  • D. 60 x 10-4

116. The holding of one extreme amplitude of the input waveform to a certain amount of potential is called

  • A. Slicing
  • B. Limiting
  • C. Rectifying
  • D. Clamping

117. Clamper is also known as

  • A. DC restorer
  • B. Rectifier
  • C. Charger
  • D. Clipper

118. Percentage ripple can be calculated by getting the _______ and multiplying the result by100%.

  • A. Ratio of the input resistance and input voltage
  • B. Product of the ac current to dc current
  • C. Ratio of the ac voltage to dc voltage
  • D. Addition of the ac and dc component of the given signal

119. Which of the following materials has the smallest leakage current?

  • A. Germanium
  • B. Carbon
  • C. Sulfur
  • D. Silicon

120. What refers to annihilation of a hole and electron?

  • A. Doping
  • B. Recombination
  • C. Diffusion
  • D. Bonding

121. What are the two possible breakdown mechanisms in pn junction diodes?

  • A. Reverse and breakdown effects
  • B. Threshold and knee effects
  • C. Avalanche and forward effects
  • D. Zener and avalanche effects

122. What occurs in pn diodes when the electric field in the depletion layer increases to the point where it can break covalent bonds and generate electron hole pairs?

  • A. Covalent breakdown
  • B. Diffusion
  • C. Zener breakdown
  • D. Avalanche effect

123. The amount of additional energy required to emit an electron from the surface of metal is called

  • A. Potential barrier
  • B. Junction voltage
  • C. Work function
  • D. Knee voltage

124. When temperature of a pure semiconductor is increased, its resistance

  • A. Decreases
  • B. Remains the same
  • C. Increases
  • D. Cannot be estimated

125. As a general rule, ________ are found only in semiconductors.

  • A. Electrons
  • B. Bulk resistances
  • C. Depletion layers
  • D. Holes

126. What in a semiconductor is defined as the incomplete part of an electron pair bond?

  • A. Hole
  • B. Valence electron
  • C. Impurity
  • D. Ion

127. When the number of free electrons is increased in doped semiconductor, it becomes a/an ______ semiconductor.

  • A. N type
  • B. P type
  • C. PN type
  • D. NP type

128. Reducing the number of free electrons in a doped semiconductor forms a/an ________ semiconductor.

  • A. N type
  • B. P type
  • C. PNPN type
  • D. NPN type

129. Pure semiconductor atoms contain how many valence electrons?

  • A. 1
  • B. 2
  • C. 4
  • D. 8

130. An acceptor atom contains how many valence electrons?

  • A. 1
  • B. 2
  • C. 3
  • D. 4

131. What is the resistivity of an extrinsic semiconductor?

  • A. 1 Ω-cm
  • B. 2 Ω-cm
  • C. 3 Ω-cm
  • D. 4 Ω-cm

132. The forward resistance crystal diode is in the order of

  • A. Ω
  • B. mΩ
  • C. µΩ
  • D. kΩ

133. What is the ideal value stability factor?

  • A. 1
  • B. 0.5
  • C. Infinite
  • D. 100

134. What is the approximate mass of a neutron at rest?

  • A. 1.6726 x 10-27 kg
  • B. 9.1096 x 10-31 kg
  • C. 1.6022 x 10-19 kg
  • D. No mass

135. Approximate mass at rest of a proton is ______ to that of a neutron.

  • A. Greater than
  • B. Equal
  • C. Less than
  • D. Comparable

136. Charge of an electron is approximately equal to

  • A. 1.6022 x 10^-19 C
  • B. -1.6726 x 10^-27 C
  • C. -1.6022 x 10-19 C
  • D. No charge

137. What capacitors are used in transistor amplifiers?

  • A. Mica
  • B. Air
  • C. Electrolytic
  • D. Paper

138. What is the reason why a common collector is used for impedance matching?

  • A. Its output impedance is very high
  • B. Its output impedance is very low
  • C. Its input impedance is very low
  • D. Its input impedance is very high

139. In power supplies, circuits that are employed in separating the ac and dc components and bypass the ac components around the load, or prevent their generation are called

  • A. Filters
  • B. Limiters
  • C. Series capacitors
  • D. Diode circuits

140. A nuclei with a common number of protons, but with different number of neutrons

  • A. Fission
  • B. Isotope
  • C. Atom
  • D. Core

141. What is the reason why FET has high input impedance?

  • A. Because its input is a forward biased
  • B. Because of the impurity atoms
  • C. Because its input is reverse biased
  • D. Because it is made of semiconductor material.

142. A MOSFET is sometimes called _____FET

  • A. Open gate
  • B. Shorted gate
  • C. Metallic gate
  • D. Insulated gate

143. Which of the following choices is an advantage of a MOSFET over a BJT in an RF amplifier circuit?

  • A. Low voltage operation
  • B. Low noise
  • C. Low amplification of signals
  • D. Compatibility

144. The voltage gain of an emitter follower circuit is

  • A. High
  • B. Low
  • C. Very high
  • D. Moderate

145. A _________ is considered a current controlled device.

  • A. Diode
  • B. Field effect transistor
  • C. Transistor
  • D. Resistor

146. A ________ is considered a voltage controlled device

  • A. FET
  • B. Diode
  • C. Transistor
  • D. Capacitor

147. The value of coupling capacitor, Cc in RC coupling is about

  • A. 0.01 µF
  • B. 0.1 µF
  • C. 10 µF
  • D. 100 µF

148. FET has a pinch-off voltage of about

  • A. 0.5 V
  • B. 5 V
  • C. 10 V
  • D. 20 V

149. What is the point of intersection between a diode characteristic and a load line?

  • A. Q point
  • B. Quiescent point
  • C. Operating point
  • D. All of the above

150. A measure of the ability of an LED to produce the desired number of lumens generated per applied watt of electrical energy.

  • A. Luminous intensity
  • B. Luminous efficiency
  • C. Luminous efficacy
  • D. Luminous ability

Complete List of MCQs in Electronics Engineering per topic

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MCQs in Solid State Devices Part III
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