MCQ in Solid State Devices Part 6 | ECE Board Exam

(Last Updated On: October 16, 2019)

This is the Multiples Choice Questions Part 6 of the Series in Solid State Devices/Circuits as one of the Electronics Engineering topic. In Preparation for the ECE Board Exam make sure to expose yourself and familiarize in each and every questions compiled here taken from various sources including but not limited to past Board Exam Questions in Electronics Engineering field, Electronics Books, Journals and other Electronics References.

MCQ Topic Outline included in ECE Board Exam Syllabi

• MCQs in Semiconductor Fundamentals
• MCQs in Transistor Components
• MCQs in Circuit Analysis and Design
• MCQs in Special Services (Photo Electric, Photo voltaic)

Continue Practice Exam Test Questions Part 6 of the Series

251. What is approximate mass of an electron at rest?

A. 9.1096 x 10^-31 kg

B. 1.6726 x 10^-27 kg

C. 1.6762 x 10^-31 kg

D. 1.7588 x 10^11 kg

252. What term is used to describe the outermost shell of an atom?

A. Valence shell

B. Free shell

C. Electron shell

D. Conductive cell

253. What are the electrons at the outermost shell which are usually weakly attracted by the core such that an outside force can easily dislodge these electrons from the atom?

A. Free electrons

B. Orbiting electrons

C. Bound electrons

D. Loose electrons

254. The reason why electrons are not pulled in the positive charged nucleus is because of the ___________ which usually became exactly equals the inward attraction of the nucleus.

A. Kinetic energy

B. Energy at rest

C. Centrifugal force

D. Frictional force

255. Which of the following items is not a type of material?

A. Conductor

B. Semiconductor

C. Insulator

D. Diode

256. The highest energy band of an atom which can be filled with electrons.

A. Valence band

B. Conduction band

C. Insulation band

D. Energy level

257. An energy band in which electrons can move freely

A. Valence band

B. Conduction band

C. Energy gap

D. Insulation gap

258. Approximate energy gap in insulator is

A. Eg ≥ 5 eV

B. Eg = 1.1 eV

C. Eg = 0.67 eV

D. Eg = 4 eV

259. The energy gap for semiconductors made of silicon is

A. Eg = 5 eV

B. Eg = 1.1 eV

C. Eg = 0.67 eV

D. Eg = 4 eV

260. The energy gap for germanium made semiconductor is

A. Eg = 5 eV

B. Eg = 1.1 eV

C. Eg = 0.67 eV

D. No energy gap

261. What type of material usually has one valence electron?

A. Insulator

B. Semiconductor

C. Conductor

D. Transistor

262. What type of material usually has four valence electrons?

A. Insulator

B. Semiconductor

C. Conductor

D. IGFET

263. Which of the following is considered as the best conductor?

A. Gold

B. Silicon

C. Germanium

D. Mica

264. Which of the items below is not taking place inside a silicon crystal?

A. Some free electrons and holes are being created by thermal energy

B. Other free electrons and holes are recombining

C. Some free electrons and holes exist in an in-between state

D. Some free electrons disappears in the lattice due to vaporization

265. It is an arrangement of silicon atoms combine to form a solid such that there are now 8 electrons in the valence shell.

A. Crystal

B. Bonding

C. Recombination

D. Solid silicon

266. The sharing of valence electrons to produce a chemically stable atom

A. Bound electrons

B. Crystal

C. Covalent bond

D. Recombination

267. The eight electrons which are tightly held by the atom are called

A. Valence electrons

B. Outermost electrons

C. Bound electrons

D. Covalent electrons

268. When an atom has bound electrons, it is described as

A. All charges do recombination

B. Valence electrons disappear due to vaporization

C. Filled or saturated since valence orbit can hold not more than 8 electrons

D. Merging of electrons and other particles

269. What refers to the temperature of the surrounding air?

A. Atmospheric temperature

B. Ambient temperature

C. Freezing point

D. Cooling temperature

270. What term is used to describe the released electrons dislodged from its original shell due to the increase in temperature which joins into a larger orbit?

A. Free electrons

B. Bound electrons

C. Covalent electrons

D. Merge electrons

271. What term is used to refer to the vacancy left by the free electron when it departs from its original shell?

A. Proton

B. Hole

C. Neutron

D. Nucleus

272. The merging of a free electron and a hole inside the silicon crystal

A. Covalent bond

B. Recombination

C. Merged electron

D. Valence bond

273. The amount of time between the creation and disappearance of a free electron.

A. Recombination time

B. Bonding time

C. Lifetime

D. Propagation time

274. The purpose of adding an impurity atom to an intrinsic crystal is

A. To alter its insulating property

B. To increase its electric conductivity

C. To stop conduction

D. To increase the resistivity of the semiconductor material

275. An extrinsic semiconductor produces ___________ when a pentavalent atom is added to the molten silicon

A. Intrinsic

B. P-type

C. N-type

D. Hybrid type

276. Which of the items below is not a pentavalent atom?

A. Phosphorus

B. Aluminum

C. Antimony

D. Arsenic

277. What extrinsic semiconductor is produced when a trivalent atom is added to the molten silicon?

A. Aluminum

B. N-type

C. P-type

D. Holes

278. The reduction of power handling capability of the diode due to the increase of ambient temperature form room temperature.

A. Maximum junction temperature

B. Linear power derating factor

C. Power factor

D. Amplification factor

279. The maximum temperature the diode can operate before burning.

A. Maximum dissipation factor

B. Maximum junction temperature

C. Ambient temperature

D. Boiling temperature rating

280. Reverse recovery time of the diode is computed as the ___________ of the storage time and transition interval from the forward to reverse bias.

A. Sum

B. Product

C. Quotient

D. Difference

281. The nucleus of a copper atom contains how many protons?

A. 2

B. 1

C. 18

D. 29

282. How many protons does the nucleus of a silicon atom contain?

A. 4

B. 14

C. 29

D. 32

283. An intrinsic semiconductor has some holes in it at room temperature. What causes these holes?

A. Doping

B. Thermal energy

C. Free electrons

D. Valence electrons

284. When a diode is forward biased, the recombination of free electrons and holes may produce _______?

A. Heat

B. Light

C. Radiation

D. All of these

285. Which of the following doping elements have a valence of 5?

A. Gallium

B. Boron

C. Aluminum

D. Phosphorous

286. Which of the following doping elements have a valence of 4?

A. Arsenic

B. Gallium

C. Aluminum

D. Silicon

287. Which of the following doping elements have a valence of 3?

A. Gallium

B. Boron

C. Aluminum

D. Phosphorous

288. It is a stable positive charge in the nucleus that is not free to move

A. Hole

B. Proton

C. Neutron

D. Electron

289. A positive charge outside the nucleus which is present only in semiconductor due to unfilled covalent bonds.

A. Electron

B. Proton

C. Hole

D. Neutron

290. When charges are forced to move by the electric field of a potential difference, ___________ current is said to flow.

A. Reverse

B. Drift

C. Leakage

D. Threshold

291. When PN junction is connected to a battery in such a way that P-side is connected to positive terminal of the battery and negative terminal to N-side, this connections is known as

A. Forward bias

B. Reverse bias

C. Back bias

D. Knee bias

292. When PN junction is connected to a battery in such a way that P-side is connected to negative terminal of the battery and positive terminal to N-side, this connections is known as

A. Forward bias

B. Reverse bias

C. Depletion connection

D. Positive bias

293. An electron in the conduction band

A. Losses its charge easily

B. Jumps to the tip of the crystal

C. Has higher energy than the electron in the valence band

D. Has lower energy that the electron in the valence band

294. An ideal diode

A. Should have a zero resistance in the forward bias as well as in reverse bias

B. Should have an infinitely large resistance in the forward bias and zero resistance in reverse bias

C. Should have zero resistance in forward bias and an infinitely large resistance in reverse bias

D. Should have infinitely large resistance in forward as well as reverse bias

295. Thermal voltage Vt is approximately equal to ___________ at room temperature (20ºC)

A. 25 mV

B. 25 V

C. 100 mV

D. 100 V

296. Boltzmann’s constant is equivalent to

A. 1.62 x 10^-18 C

B. 8032 x 10^-5 eV/°K

C. 0.7 V

D. 1.3 x 10^8 V/m

297. The preferred form of biasing a JFET amplifier is through the

A. Voltage divider bias

B. Gate bias

C. Self bias

D. Source bias

298. The gate-to0source on voltage if an n-channel enhancement mode MOSFET is

A. Less than V_th

B. Equal to V_gs(off)

C. Greater than V_DS(on)

D. Greater than V_GS(th)

299. A mechanism for carrier motion in semiconductors which occurs when an electric field is applied across a piece of silicon

A. Carrier diffusion

B. Carrier drift

C. Recombination

D. Diffusivity

300. What occurs in pn diodes when the minority carriers that cross the depletion region under the influence of the electric field gain sufficient kinetic energy to be able to break covalent bonds in atoms with which they collide?

A. Drift

B. Avalanche breakdown

C. Diffusion

D. Saturation

Questions and Answers in Solid State Devices

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Complete List of MCQ in Electronics Engineering per topic