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# MCQ in Electronic Systems and Design Part 5 | ECE Board Exam

This is the Multiple Choice Questions in Electronic Systems and Design Part 5 of the Series as one of the Electronics Engineering Examination topic. In Preparation for the ECE Board Exam make sure to expose yourself and familiarize in each and every questions compiled here taken from various sources including but not limited to past Board Exam Questions in Electronics Engineering field, Electronics Books, Journals and other Electronics References.

#### MCQ Topic Outline included in ECE Board Exam Syllabi

6. Electronic Systems and Design

• MCQ in SCR’s, UJT, PUT, TRIAC, DIAC, and other Thyristors
• MCQ in Optoelectronic Devices and Sensors
• MCQ in Transducers, Data Acquisition, and Interfacing Techniques
• MCQ in Programmable Logic Controllers
• MCQ in Design and Integration in Building Management Systems and HVAC Controls,
Security, Safety, and Surveillance Control Systems, and Audio-Video and Lighting
Controls
• MCQ in Instrumentation and Control
• MCQ in Welding Systems
• MCQ in Robotic Principles
• MCQ in Bioelectrical Principles

#### Continue Practice Exam Test Questions Part 5 of the Series

Choose the letter of the best answer in each questions.

201. For an SCR, dv/dt protection is achieved through the use of:</>

A. RL in series with SCR

B. RC across SCR

C. L in series with SCR

D. RC in series with SCR

Solution:

202. A technique use to turn off a thyristor using an external circuit which causes the anode to become negatively biased.

A. force commutation

B. reverse triggering

C. negative feedback

D. doping

Solution:

203. The turn-off time of thyristor is 30 m sec at 50ยฐC. Its turn-off time at 100ยฐ is

A. same

B. 15 m sec

C. 60 m sec

D. 100 m sec

Solution:

204. The peak and valley currents of the PUT are typically ___________ those of a similarly rated UJT.

A. lower than

B. the same as

C. higher than

D. None of the above

Solution:

205. What is a solid state equivalent of a gas filled triode?

A. Triac

B. Thyristor

C. SCR

D. SCS

Solution:

206. The method(s) for turning off an SCR is (are) categorized as ___________.

A. current interruption

B. forced commutation

C. both current interruption and forced commutation

D. None of the above

Solution:

207. In a certain UJT rB1 is 2.5 kโฆ and rB2 = 4 kโฆ. What is the intrinsic standoff ratio?

A. 0.61538

B. 0.38461

C. 2.6

D. 0.8125

Solution:

208. When SCR starts conducting, then __________ losses all control.

A. gate

B. anode

C. cathode

D. anode supply

Solution:

209. You have the schematic diagram of several types of circuits. Which of these circuits most likely uses a triac?

A. an oscillator

B. an ac motor control

C. a programmable oscillator

D. an amplifier

Solution:

210. Determine RB1 for a silicon PUT if it is determined that h = 0.84, VP = 11.2 V, and RB2 = 5 kโฆ.

A. 12.65 kโฆ

B. 16.25 kโฆ

C. 20.00 kโฆ

D. 26.25 kโฆ

Solution:

211. Which of the following devices does not have a cathode terminal?

A. SCR

B. SCS

C. TRIAC

D. Shockley diode

Solution:

212. The UJT operates in what region after peak point?

A. Cut off

B. Negative resistance

C. Saturation

D. Positive resistance

Solution:

213. What is basically a two-terminal parallel-inverse combination of semiconductor layers that permits triggering in either direction?

A. DIAC

B. TRIAC

D. Shockley Diode

Solution:

214. Which device does not have a gate terminal?

A. Triac

B. SCR

C. FET

D. Diac

Solution:

215. The four-layer devices with a control mechanism are commonly referred to as ___________.

A. thyristors

B. transistors

C. diodes

D. None of the above

Solution:

216. What is that voltage above when the SCR enters the conduction region?

A. Reverse breakover voltage

B. Forward breakover voltage

C. Holding voltage

D. Trigger voltage

Solution:

217. It is a three-terminal silicon diode with the ability to control a large ac power with a small signal.

A. TRIAC

B. SCR

C. UJT

D. SCS

Solution:

218. The smallest amount of current that the cathode-anode can have, and still sustain conduction of an SCR is called the:

A. maximum forward current

B. maximum forward gate current

C. holding current

D. reverse gate leakage current

Solution:

219. It is the minimum additional current that can make up for any missing input (gate) current in order to keep the device ON.

A. leakage current

B. ac current

C. holding current

D. switching current

Solution:

220. The PUT (programmable unijunction transistor) is actually a type of:

A. UJT thyristor

B. FET device

C. TRIAC

D. SCR

Solution:

221. What is the typical value of the interbase resistance of UJTs?

A. 20 Kฮฉ

B. Between 4 to 4 Kฮฉ

C. 4 Kฮฉ

D. Between 4 to 10 Kฮฉ

Solution:

222. Which of the following is a four-layer diode with an anode gate and a cathode gate?

A. SCS

B. SCR

C. SBS

D. SUS

Solution:

223. SCR is a rectifier constructed of silicon material. Silicon is chosen because

A. it is the most abundant material

B. of its strength and ruggedness

C. it is much cheaper than any other material

D. of its high temperature and power capabilities

Solution:

224. When the temperature increases, the intrinsic standoff ratio

A. increases

B. decreases

C. essentially constant

D. becomes zero

Solution:

225. SCRs have been designed to control powers as high as ___________, with individual ratings as high as ___________ at __________.

A. 1800 MW, 10 A, 2000 V

B. 1800 MW, 2000 A, 10 V

C. 10 MW, 2000 A, 1800 V

D. 2000 MW, 10 A, 1800 V

Solution:

226. An SCR is a member of what family?

A. Thyrector

B. Thyratron

C. Thyristor

D. Transistor

Solution:

227. Which of the following can change the angle of conduction in SCR?

A. Changing anode voltage

B. Changing gate voltage

C. Reverse biasing the gate

D. Changing cathode voltage

Solution:

228. What is the frequency range of application of SCRs?

Solution:

229. The minimum operating voltage of the UJT is typically ____________ that of a similarly rated PUT.

A. lower than

B. the same as

C. higher than

D. None of the above

Solution:

230. A UJT is sometimes called a ___________ diode.

A. double-based

B. single-based

C. a rectifier

D. a switching diode

Solution:

231. It is like a low current SCR with two gate terminals.

A. UJT

B. PUT

C. SCR

D. SCS

Solution:

232. What is the typical value of the reverse resistance of SCRs?

A. 1 โฆ to 10 โฆ

B. 100 โฆ to 1 kโฆ

C. 1 kโฆ to 50 kโฆ

D. 100 kโฆ or more

Solution:

233. Which of the following is the normal way to turn on a diac?

A. By breakover voltage

B. By gate voltage

C. By gate current

D. By anode current

Solution:

234. In a SCR circuit, the angle of conduction can be changed by changing

A. anode voltage

B. anode current

C. forward current rating

D. gate current

Solution:

235. The function of snubber circuit connected across the SCR is to:

A. Suppress dv/dt

B. Increase dv/dt

C. Decrease dv/dt

D. Decrease di/dt

Solution:

236. An SCR is made of what material?

A. Silicon

B. Carbon

C. Germanium

D. Gallium-arsenide

Solution:

237. The SCR can exercise control over ____________ of ac supply.

A. positive or negative half-cycle

B. both positive and negative half-cycles

C. only positive half-cycle

D. only negative half-cycle

Solution:

238. Which of the following conditions is necessary for triggering system for thyristors?

A. It should be synchronized with the main supply

B. It must use separate power supply

C. It should provide a train of pulses

D. None of these

Solution:

239. A normally operated SCR has an anode which is ___________ with respect to cathode.

A. negative

B. positive

C. at zero potential

D. at infinite potential

Solution:

240. Which of the following devices has (have) four layers of semiconductor materials?

A. Silicon-controlled switch (SCS)

B. Gate turn-off switch (GTO)

C. Light-activated silicon-controlled rectifier (LASCR)

D. All of the above

Solution:

241. How many pn junction does SCRs have?

A. Two

B. Four

C. Three

D. Five

Solution:

242. The silicon-controlled switch (SCS) is similar in construction to the

A. triac.

B. diac.

C. SCR.

D. 4-layer diode.

Solution:

243. Which of the following devices has nearly the same turn-on time as turn-off time?

A. SCR

B. GTO

C. SCS

D. LASCR

Solution:

244. Which of the following is (are) the advantages of the SCS over a corresponding SCR?

A. Reduced turn-off time

B. Increased control and triggering sensitivity

C. More predictable firing situation

D. All of the above

Solution:

245. An effect that reduces the possibility of accidental triggering of the SCS.

A. Miller effect

B. Rate effect

C. End effect

D. Flywheel effect

Solution:

246. An SCR whose state is controlled by the light falling upon a silicon semiconductor layer of the device.

A. SCS

B. GTO

C. Thyristor

D. LASCR

Solution:

247. Power electronics deals with the control of ac power at what frequencies essentially?

A. 20 KHz

B. 1000 KHz

C. Frequencies less than 10 Hz

D. 60 Hz frequency

Solution:

248. To turn on the UJT, the forward bias on emitter diode should be __________ the peak point voltage.

A. more than

B. less than

C. equal to

D. twice

Solution:

249. What is the resistance of a certain 4-layer diode in the forward-blocking region if VAK = 15 V and IA = 1 uA

A. 15 โฆ

B. 21.21 Mโฆ

C. 15 M โฆ

D. 10.61 Mโฆ

Solution:

250. What is the peak-point voltage for the UJT in problem 76 if VBB = 15 V?

A. 10.605

B. 5.76912

C. 6.46915

D. 0.8125

Solution:

#### Questions and Answers in Electronic Systems and Design

Following is the list of multiple choice questions in this brand new series:

MCQ in Electronic Systems and Design
PART 1: MCQ from Number 1 โ 50                         Answer key: PART 1
PART 2: MCQ from Number 51 โ 100                    Answer key: PART 2
PART 3: MCQ from Number 101 โ 150                  Answer key: PART 3
PART 4: MCQ from Number 151 โ 200                  Answer key: PART 4
PART 5: MCQ from Number 201 โ 250                  Answer key: PART 5
PART 6: MCQs from Number 251 โ 300                Answer key: PART 6
PART 7: MCQ from Number 301 โ 350                  Answer key: included
PART 8: MCQ from Number 351 โ 400                  Answer key: included
PART 9: MCQ from Number 401 โ 450                  Answer key: included
PART 10: MCQ from Number 451 โ 500                Answer key: included

### Complete List of MCQ in Electronics Engineering per topic

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