Electronics Engineering Coaching Materials: Section 5 Module 3

(Last Updated On: March 30, 2018)

This is the Section 5 Module 3 of the compiled Electronics Coaching Materials taken from different sources including but not limited to Electronics books, past Board Exams Questions, Journals and other Electronics References. This particular Coaching Notes in Electronics Engineering has random Questions and Answers in random topics. Make sure to familiarize each questions to increase the chance of passing the ECE Board Exam.

Electronics Engineering Coaching: Section 5 Module 3

Leakage flux – flux that drifts

Bridgman effect – susceptibilities of paramagnets

Evaporation of electrons from heated objects – thermionic emission

Toroid – core magnetic ring

Strength of magnetic field – can be determined by amount of current

Clamp meter – used to measure the amount of current

Near wire – where the current is stronger

Keeper – maintain strength

Most induced – the one with the highest frequency

Weigand effect – effect mechanically stressed

Hall effect – anything with magnetism

Capacitance – was not greatly affected by the voltage

Factor(s)- isa lng sgot

Factors – madmi

 

All nodes – are needed in nodal analysis

Kirchoff’s 2^nd law – Vin = Vout

Thevenin’s law – open ckt voltage (key word)

Norton – current

Reactive – theres a phase difference

Admittance – phasor sum

Motor action – physical motion

Wall effect – walls (key word)

Lowest dielectric – air

Lowest dielectric – paper

Capacitive – more than resonant ; parallel

Q 10 – energy stored

Atomic structure – determine amount of electricity flow

Alloy – ELEMENT without chemical effect

Hydrogen atom – 1.1 x 10 e-10 m

Bohrs model – commonly used model

Aage Bohr – continued the work of Neil Bohr

Manganin – wire wound

Mass- doesn’t affect the resistance

8 – stability

Isotope – SAME PROTON ; DIFFERENT NEUTRON

Resonance curve – between current and frequency

Exclusion – diff quantum no.

Wolfgang Pauli

Plasma – charged gases

Bose –Einstein Condenstae – 5^th state

Bose – Indian

Statcoulomb – electrostatic unit (esu)

Take note of the parenthesis

Cryogenics – absolute zero

Room temperature

27

25

20

17

Electrolytic – dc filters (polarity)

Pg sumbog- at the perforated portion of the capacitor

Gilbert – coined the word electricity

Cryogenic – superconductor

Manganin – positive (metal)

Electrolytes – water (keyword)

Test charge – +1 coulomb

90 degrees – flow of electric lines

Permittivity – 1 – 10

Velocity factor – 0.01 – 1

Positive – higher than cold resistance (tungsten bulb)

Mercury – sobrang bilis matunaw

Tungsten – matagal

k = 8.89 x 10 e9

k = 9 x 10 e9

magnetic axis – straight line in magnets

soft – easily magnetize

permeability – conductivity for magnetic lines

cores of magnet – high permeability

cobalt – ferromagnet

magnet >1

para slightly >1

dia <1

Fe N Alnico Co – ferro magnets

Tesla – magnetic flux in SI

Childs Law – thermionic diode (keyword)

Gaussmeter – magnetic flux density

Force vs permeability – inverse

Maxwell- flux in cgs

Faradic current – current in induction coils

Oersted – 1 Gb/cm

Pure gold – 0.0034

V/m – electric field strength

Reactance chart – estimate resonance and determine reactance

1 – peak of rectangular wave

Atomic packing factor – ratio of volume…

Dielectric iron – mica

Dielectric high voltage transmission – porcelain

Mesh – chosen closed path

Node – reference point

Superposition – supply voltage (keyword)

Ac vs dc – economical

Easy transmission
easily changed

Ac – slip ring

Dc – commutator

Inverter – dc – ac ; quasi –sine

Converter – ac – dc

Ionization potential – remove valence electron

Capacitive- leads series 45 degrees(keyword)

Parallel – independent operation

Electrolytic – highest cost

Triangular – peakiest

Capacitive – admittance is +j

Parallel circuit at RESONANCE – resistive

; variable capacitance

Multiple capacitance – increase in pl8

Edison effect – hot bodies

Ceramic – Barium Strontium TITANITE

Negative coefficient – carbon (semiconductor)

Lowest capacitance – air (1)

Onnes – superconductor (1911)

Bednorz – superconductor (1987)

Bullet train – has wheels

Neon – 80 V

Bifilar – doubled back (keyword)

Bleeder – parallel to capacitor for discharging

10 – hot vs cold resistance

Electric dipole – equal magnitude different signs

Manganin – 84 copper, 12 manganese, 4 nickel

Stray capacitor – not by design (keyword)

Unit pole – pole with similar and equal pole

Ferrites – non metallic ferromagnets

Class A – whole input cycle

Transconductance

FET has substrate – MOSFET (all); but not JFET

LM – National Semiconductor Corporation

BJT – 4 x 6.5 mils

1 mil = 0.001 inch

Stray – unwanted capacitances

CCD – Boyle and Smith

Monolithos – single stone

Class S – FM and AM

Op Amp – common IC

Quasi complementary Push-pull – looks like push pull npn and pnp

Electron flow – opposite of hole flow

Intrinsic – free from impurities

Trivalent – Acceptor

Relaxation oscillator – charging and discharging of the capacitor

Positive – to deplete p channel

Unity gain bandwidth product / unity current gain bandwidth product

Jack Kilby – IC

Voltage gain decreases – when capacitance is removed

Free electrons increases when temperature increases

Drift current – current flow when there is an applied electric field

Transformer coupling – minimum interference

Direct coupling – wid frequency response

; voltage divider principle

Slope resistance – 10 ohms (Zener)

Intrinsic – pure

Class A – 25%

Coupled wid transformer – 50%

Just below saturation

Just above cut-off – best stability and efficiency (loadline)

; attenuation T pad

Attenuation = 20 log k

X = axis of crystal

Most efficient – Class A transformer coupled

Crystal oscillator – high Q (very stable)

Q point of AB – slightly above cut off

Ionization potential – remove valence electron

Bohr model – semiconductor model

Selenium – xerography

Antimony – donor

Increase in power transistor size – dissipate more heat

Hum in circuit– pulsating dc power amplifier

Doping – adding impurities

Cross over network – tweeter and woofer (keywords)

Source – where the substrate in MOSFET was connected

Roll off – gain reduction

Recombination – electrons recombine with the hole

INTEL i486 – 1 million

VMOSFET – short and wide

Class A – least distortion

Class D – digital use

Manufacturer – letter prefix

Parasitic oscillation – transistor interelectrode capacitance

PAA N (Phosphorus, Antimony, Arsenic – n type – pentavalent)

GaBI P (Gallium, Boron, Indium – p tye – trivalent)

PN junction – n type, p type

PN one way valve – ……….when pumped from P to N

Diode action – Unidirectional conduction

Causes junction depletion – combination of + and –

Reverse – widens depletion region

Forward – narrows depletion region

Increasing temperature – decreases threshold voltage

Reverse – breakdown voltage

PIV

PRV

Where;

k = 11600 / n

Vd = Vf

n = 1 (ge)

Tk = 273 + temperature given

n = 2 (si)

17 degrees Celsius – ambient temperature

; To = temperature given

k = -2.5 V/C (ge) Vth = 0.3 (ge)

k = -2.0 V/C (si) Vth = 0.7 (si)

Varactor – utilizes capacitance

Reverse recovery time – diode at high speed switching

Eccles / Jordan – bistable multivibrator (flip flop)

Pulse time – monostable (resistor and capacitor combination)

Multivibrator – 2 transistor alternately off and on

Hartley oscillator – self excited, tapped coil

Collpitts – 2 capacitors

Clap – 3 cap, 1 ind

Armstrong (Tickler) – 1 cap, 1 ind

Current gain = 20 log I

Open loop – highest gain op amp

Common mode – lowest gain op amp

Vo = 0V – same signal, inverting and non inverting

Differential – add

Level shifter – output complementary (max)

Op Amp – Rin = infinite ; Rout = 0

5 usable terminals – Op Amp

Darlington – Transformer configuration super beta

Gain = not db (multiply) ; db (add)

; maximum transconductance

Fieldistor – early version of FET

Pinch-off voltage – causes I drain equal to 0

Unipolar – FET

Bipolar – BJT

High R_in – common collector

CE – the emitter is not used as input or output

0V – transistor is saturated

Cut-off – OFF

Saturation – BE, BC forward

Cut off – BE reverse ; BC forward

Vbe = 0.7 – to turn on transistor

Voltage regulator – most efficient switching regulator

Common emitter amp with voltage divider bias – treat them as connected in parallel

Close loop gain cant be affected by open loop gain

Point contact – predecessor of junction transistor

Emitter to collector – flow of electrons in NPN

Half wave rectifier – series clipper

Avalanche – collide wid electron

Power gain = AvAi

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