Boylestad: MCQ in Semiconductor Diodes

This is the Multiple Choice Questions in Semiconductor Diodes from the book Electronic Devices and Circuit Theory 10th Edition by Robert L. Boylestad. If you are looking for a reviewer in Electronics Engineering this will definitely help. I can assure you that this will be a great help in reviewing the book in preparation for your Board Exam. Make sure to familiarize each and every questions to increase the chance of passing the ECE Board Exam.

Online Questions and Answers Topic Outline

• MCQ in Ideal Diode
• MCQ in Semiconductor Materials
• MCQ in Energy Levels
• MCQ in Extrinsic Materials—n- and p-Type
• MCQ in Semiconductor Diode
• MCQ in Resistance Levels
• MCQ in Diode Equivalent Circuits
• MCQ in Diode Specification Sheets
• MCQ in Transition and Diffusion Capacitance
• MCQ in Reverse Recovery Time
• MCQ in Semiconductor Diode Notation
• MCQ in Diode Testing
• MCQ in Zener Diodes
• MCQ in Light-Emitting Diodes (LED)
• MCQ in Diode Arrays—Integrated Circuits

Practice Exam Test Questions

Choose the letter of the best answer in each questions.

1. How many terminals does a diode have?

A) 1

B) 2

C) 3

D) 4

2. What is the resistor value of an ideal diode in the region of conduction?

A) 0

B) 5 k

C) Undefined

D) Infinity

3. What is the state of an ideal diode in the region of nonconduction?

A) An open circuit

B) A short circuit

C) Unpredictable

D) Undefined

4. The diode _______.

A) is the simplest of semiconductor devices

B) has characteristics that closely match those of a simple switch

C) is a two-terminal device

D) All of the above

5. The ideal diode is a(n) _______ circuit in the region of nonconduction.

A) open

B) short

6. Which of the following is an atom composed of?

A) Electrons

B) Protons

C) Neutrons

D) All of the above

7. How many orbiting electrons does the germanium atom have?

A) 4

B) 14

C) 32

D) 41

8. How many valence electrons does a silicon atom have?

A) 1

B) 2

C) 3

D) 4

9. One eV is equal to _______ J.

A) 6.02 × 10^23

B) 1.6 × 10^–19

C) 6.25 × 10^18

D) 1.66 × 10^–24

10. Which of the following elements is most frequently used for doping pure Ge or Si?

A) Boron

B) Gallium

C) Indium

D) All of the above

11. The diffused impurities with ________ valence electrons are called donor atoms.

A) 4

B) 3

C) 5

D) 0

12. In what state is a silicon diode if the voltage drop across it is about 0.7 V?

A) No bias

B) Forward bias

C) Reverse bias

D) Zener region

13. What unit is used to represent the level of a diode forward current IF?

A) pA

B) nA

C) A

D) mA

14. Which of the following ratings is true?

A) Si diodes have higher PIV and narrower temperature ranges than Ge diodes.

B) Si diodes have higher PIV and wider temperature ranges than Ge diodes.

C) Si diodes have lower PIV and narrower temperature ranges than Ge diodes.

D) Si diodes have lower PIV and wider temperature ranges than Ge diodes.

15. It is not uncommon for a germanium diode with an Is in the order of 1–2 A at 25°C to have leakage current of 0.1 mA at a temperature of 100°C.

A) True

B) False

16. Calculate static resistance R_D of a diode having I_D = 30 mA and V_D = 0.75 V.

A) 25

B) 40

C) 0.04

D) 0.025

17. Calculate ID if R_D = 30 and V_D = 0.84 V.

A) 28 mA

B) 0.028 mA

C) 2.8 A

D) 280 A

18. Refer to Figure 1.27. Calculate the dynamic resistance R_D of a diode having I_D = 27.5 mA.

A) 0

B) 2

C) 5

D) 26

19. Determining rd to a high degree of accuracy from a characteristic curve is very accurate.

A) True

B) False

20. The _________ diode model is employed most frequently in the analysis of electronic systems.

A) ideal device

B) simplified

C) piecewise-linear

D) none of the above

21. Calculate the power dissipation of a diode having I_D = 40 mA.

A) 28 mW

B) 28 W

C) 280 mW

D) Undefined

22. Which capacitance dominates in the reverse-bias region?

A) depletion

B) conversion

C) Diffusion

D) None of the above

23. Which capacitance dominates in the forward-bias region?

A) Diffusion

B) Transition

C) Depletion

D) None of the above

24. At what kind of operating frequency diffusion or transition is a capacitor represented in parallel with the ideal diode?

A) Low frequency

B) Moderate frequency

C) Mid frequency

D) Very high frequency

25. What is the value of the transition capacitance for a silicon diode when V_D = 0?

A) 1 pF

B) 3 pF

C) 5 pF

D) 10 pF

26. Which of the following devices can check the condition of a semiconductor diode?

A) Digital display meter (DDM)

B) Multimeter

C) Curve tracer

D) All of the above

27. What does a high resistance reading in both forward- and reverse-bias directions indicate?

A) A good diode

B) An open diode

C) A shorted diode

D) A defective ohmmeter

28. The condition of a semiconductor diode can be determined quickly using a _________.

A) DDM

B) VOM

C) curve tracer

D) Any of the above

29. Determine the nominal voltage for the Zener diode at a temperature of 120°C if the nominal voltage is 5.1 volts at 25°C and the temperature coefficient is 0.05%/°C.

A) 4.6 V

B) 4.86 V

C) 5.1 V

D) 5.34 V

30. Calculate the temperature coefficient in %/°C of a 10-V nominal Zener diode at 25°C if the nominal voltage is 10.2 V at 100°C.

A) 0.0238

B) 0.0251

C) 0.0267

D) 0.0321

31. In which of the following color(s) is (are) LEDs presently available?

A) Yellow

B) White

C) Orange

D) All of the above

32. What is the maximum power rating for LEDs?

A) 150 mW

B) 500 mW

C) 1 W

D) 10 W

33. In which of the following is the light intensity measured?

A) Candela

B) Efficacy

C) Flux

D) Illumination

34. What is the range of the operating voltage level for LEDs?

A) 5–12 mV

B) 1.7–3.3 V

C) 5–12 V

D) 20–25 V

35. In general, LEDs operate at voltage levels from _____ V to _____ V.

A) 1.0, 3.0

B) 1.7, 3.3

C) 0.5, 4.0

D) None of the above

FILL IN THE BLANK QUESTIONS

1. A(n) _______ is the simplest of semiconductor devices.

A) diode

B) transistor

C) operational amplifier

D) SCR

2. The term ________ is often used when comparing the resistance level of materials.

A) permittivity

B) inductivity

C) conductivity

D) resistivity

3. In the atomic lattice the _______ and _______ form the nucleus.

A) electrons, neutrons

B) electrons, protons

C) neutrons, protons

D) None of the above

4. An increase in temperature of a semiconductor can result in a _______ in the number of free electrons in the material.

A) substantial increase

B) substantial decrease

C) slight decrease

D) no change

5. Ge and Si have a(n) _______ coefficient in forward bias.

A) positive temperature

B) negative temperature

C) absolute temperature

D) temperature free

6. Any electron that has left its parent atom has _______ energy state relative to any electron in the atomic structure.

A) the same

B) a lower

C) a higher

D) an undefined

7. Introducing those impurity elements that have _______ valence electrons creates the n-type material.

A) 0

B) 3

C) 4

D) 5

8. In n-type material the _______ is called the majority carrier.

A) electron

B) hole

C) proton

D) neutron

9. The diffused impurities with _______ valence electrons are called acceptor atoms.

A) 0

B) 3

C) 4

D) 5

10. The reverse-saturation current level is typically measured in _______.

A) pA

B) µA

C) mA

D) A

11. The depletion width _______ in the forward bias, which results in having a majority flow across the junction.

A) widens

B) remains unchanged

C) shrinks

D) widens and shrinks alternatively

12. The forward characteristics curve of a diode grows in _______ form.

A) linear

B) exponential

C) logarithmic

D) sinusoidal

13. The potential at which the characteristics curve vertical rise occurs is commonly referred to as the _______.

A) offset

B) threshold

C) firing potential

D) All of the above

14. The reverse saturation current Is will just _______ in magnitude for every 10° C increase in temperature.

A) double

B) remain the same

C) halve

D) triple

15. Diodes are connected _______ to increase the current-carrying capacity.

A) in series

B) in parallel

C) in parallel-series

D) None of the above

16. The _______ the current through a diode, the _______ the dc resistance level.

A) higher, lower

B) lower, lower

C) lower, higher

D) higher, higher

17. Varying the _______ can control the location of the Zener region.

A) forward current

B) doping levels

C) forward voltage

D) dc resistance

18. The test current in a Zener diode IZT is the current defined by the _______ power level.

A) 0.25

B) 0.5

C) 0.75

D) 1.00

19. The heavier the current in a Zener diode in reverse bias, _______ dynamic resistance value.

A) the more the

B) the less the

C) there is substantially more

D) there is no change in the

20. The intensity of LED is greatest at _______ degrees and the least at _______ degrees.

A) 0, 90

B) 45, 90

C) 0, 45

D) 90, 180

21. The temperature coefficient can be _______ for different Zener levels.

A) positive

B) negative

C) zero

D) All of the above

22. The reverse recovery time of most commercial switching diodes is in the range of _______.

A) picoseconds

B) a few nanoseconds

C) several microseconds

D) milliseconds

23. The ac resistance of a diode is the _______ of the characteristic curve at the Q-point of operation.

A) reciprocal of the slope

B) slope

C) midpoint

D) average value

24. Generally the value of ac resistance is _______ the value of dc resistance at the same operating point.

A) smaller than

B) larger than

C) the same as

D) unrelated to

25. The reverse-bias current _______ with the increase of temperature.

A) decreases

B) increases

C) remains the same

D) None of the above

Check your work.

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