Practice Quiz in Field Effect Transistor Devices Part 5

Question 41. VMOS FETs have a _____ temperature coefficient that will combat the possibility of thermal runaway.

Question 42. The level of _____ that results in the significant increase in drain current in enhancement-type MOSFETs is called threshold voltage V_T’.

Question 43. The silicon dioxide (SiO_{2/sub>) layer used in a MOSFET is _____.}

Question 44. The region to the right of the pinch-off locus is commonly referred to as the _____ region.

Question 45. The primary difference between the construction of a MOSFET and an FET is the _____.

Question 46. A(n) _____ can be used to check the condition of an FET.

Question 47. In an n-channel enhancement-type MOSFET with a fixed value of V_T’, the _____ the level of V_GS’, the _____ the saturation level for V_DS’.

Question 48. The FET resistance in the ohmic region is _____ at V_P and _____ at the origin.

Question 49. The FET is a _____ device depending solely on either electron (n-channel) or hole (p-channel) conduction.

Question 50. The primary difference between the construction of depletion-type and enhancement-type MOSFETs is _____.