Malvino: MCQ in Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

(Last Updated On: February 7, 2020)

This is the Multiple Choice Questions in Chapter 14: Metal Oxide Semiconductor Field-Effect Transistor (MOSFETs) from the book Electronic Principles 7th Edition by Albert Malvino. If you are looking for a reviewer in Electronics Engineering this will definitely help. I can assure you that this will be a great help in reviewing the book in preparation for your Board Exam. Make sure to familiarize each and every questions to increase the chance of passing the ECE Board Exam.

Topic Outline

• MCQs in Depletion-Mode MOSFET
• MCQs in D-MOSFET Curves
• MCQs in Depletion-Mode MOSFET Amplifier
• MCQs in Enhancement-Mode MOSFET
• MCQs in Ohmnic Region
• MCQs in Digital Switching
• MCQs in CMOS
• MCQs in Power FETs
• MCQs in E-MOSFET Amplifiers
• MCQs in MOSFET Testing

Start Practice Exam Test Questions

Choose the letter of the best answer in each questions.

1. Which of the following devices revolutionized the computer industry?

• a. JFET
• b. D-MOSFET
• c. E-MOSFET
• d. Power FET

2. The voltage that turns on an EMOS device is the

• a. Gate-source cutoff voltage
• b. Pinch-off voltage
• c. Threshold voltage
• d. Knee voltage

3. Which of these may appear on the data sheet of an enhancement-mode MOSFET?

• a. VGS(th)
• b. ID(on)
• c. VGS(on)
• d. All of the above

4. The VGS(on) of an n-channel E-MOSFET is

• a. Less than the threshold voltage
• b. Equal to the gate-source cutoff voltage
• c. Greater than VDS(on)
• d. Greater than VGS(th)

5. An ordinary resistor is an example of

• a. A three-terminal device
• b. An active load
• c. A passive load
• d. A switching device

6. An E-MOSFET with its gate connected to its drain is an example of

• a. A three-terminal device
• b. An active load
• c. A passive load
• d. A switching device

7. An E-MOSFET that operates at cutoff or in the ohmic region is an example of

• a. A current source
• b. An active load
• c. A passive load
• d. A switching device

8. CMOS stands for

• a. Common MOS
• b. Active-load switching
• c. p-channel and n-channel devices
• d. Complementary MOS

9. VGS(on) is always

• a. Less than VGS(th)
• b. Equal to VDS(on)
• c. Greater than VGS(th)
• d. Negative

10. With active-load switching, the upper E-MOSFET is a

• a. Two-terminal device
• b. Three-terminal device
• c. Switch
• d. Small resistance

11. CMOS devices use

• a. Bipolar transistors
• b. Complementary E-MOSFETs
• c. Class A operation
• d. DMOS devices

12. The main advantage of CMOS is its

• a. High power rating
• b. Small-signal operation
• c. Switching capability
• d. Low power consumption

13. Power FETs are

• a. Integrated circuits
• b. Small-signal devices
• c. Used mostly with analog signals
• d. Used to switch large currents

14. When the internal temperature increases in a power FET, the

• a. Threshold voltage increases
• b. Gate current decreases
• c. Drain current decreases
• d. Saturation current increases

15. Most small-signal E-MOSFETs are found in

• a. Heavy-current applications
• b. Discrete circuits
• c. Disk drives
• d. Integrated circuits

16. Most power FETS are

• a. Used in high-current applications
• b. Digital computers
• c. RF stages
• d. Integrated circuits

17. An n-channel E-MOSFET conducts when it has

• a. VGS > VP
• b. An N-Type inversion layer
• c. VDS > 0
• d. Depletion layers

18. With CMOS, the upper MOSFET is

• a. A passive load
• b. An active load
• c. Nonconducting
• d. Complementary

19. The high output of a CMOS inverter is

• a. VDD/2
• b. VGS
• c. VDS
• d. VDD

20. The RDS(on) of a power FET

• a. Is always large
• b. Has a negative temperature coefficient
• c. Has a positive temperature coefficient
• d. Is an active load

Check your work.

Complete List of MCQ in Electronic Principles by Albert Malvino