Semiconductor diode fundamentals is the prerequisite block that every other diode topic on the Philippine engineering board exam depends on. It appears directly in Electronic Devices and Circuits for the ECE board, in Electronics Engineering fundamentals for the EE board, and it is the physical foundation behind every rectifier, clipper, clamper, and voltage regulator circuit in the Diode Applications series. Master this block and you are not just answering one set of items. You are building the conceptual base that every later diode circuit problem assumes you already know.
This page is the complete hub for the PinoyBIX Semiconductor Diode Fundamentals ECE and EE Board Exam Reviewer Series. It contains a consolidated formula reference sheet covering all eight posts, a 40-item multiple-choice practice exam drawn evenly from every topic, and a full navigation guide to every post in the series. If you are short on time, start with the formula sheet. If you want to test yourself before the board exam, go straight to the practice exam.
- ECE (Electronics Engineer) — High frequency. Appears directly in Electronic Devices and Circuits, and underpins nearly every diode application problem elsewhere on the exam. All eight topics in this series are tested. Expect 20 to 30 items total across the board exam that either test this material directly or require it as a prerequisite step.
- EE (Electrical Engineer) — Moderate to high frequency. Appears in Electronics Engineering fundamentals, with the practical diode model, PN junction biasing, and basic resistance concepts tested most often.
- ME (Mechanical Engineer) — Low frequency. Basic diode concepts may appear in an Electronics or Instrumentation elective, but this is not core material for the ME board.
- CE (Civil Engineer) — Not significant. This topic block does not appear in the CE board exam scope.
- ChE (Chemical Engineer) — Not significant. This topic block does not appear in the ChE board exam scope.
- GeE (Geodetic Engineer) — Not significant. This topic block does not appear in the GeE board exam scope.
- MetE and MinE — Not significant. This topic block does not appear in the MetE or MinE board exam scope.
- Naval Architect and Marine Engineer — Not significant. This topic block does not appear in the Naval Architecture board exam scope.
The Complete Series — Eight Parts
Each part of this series builds on the previous one. If you are new to diode fundamentals, read the parts in order. If you are reviewing a specific topic for the board exam, jump directly to the part you need.
| Part | Topic | Key Concepts | Problems | Best For |
|---|---|---|---|---|
| Part 1 | Ideal Diode Model | Diode as a switch, forward/reverse bias, ideal vs practical VF | 10 | All boards — foundational, read this first |
| Part 2 | Semiconductor Materials and Energy Levels | Conductivity spectrum, energy gap Eg, intrinsic carriers, temperature coefficient | 10 | ECE, EE — physics foundation |
| Part 3 | N-Type and P-Type Semiconductors | Doping, donor and acceptor atoms, majority and minority carriers | 10 | ECE, EE — core concept |
| Part 4 | The PN Junction and Diode Biasing | Depletion region, no bias, forward bias, reverse bias, reverse saturation current | 10 | ECE, EE — critical topic |
| Part 5 | Breakdown and the Zener Region | PIV, avalanche vs Zener breakdown, threshold voltage by material | 10 | ECE — foundation for Zener regulators |
| Part 6 | Temperature Effects and Diode Resistance Levels | DC, AC, and average AC resistance, temperature effects recap | 10 | ECE — reliable numeric items |
| Part 7 | Diode Equivalent Circuits and Approximation Levels | Ideal, simplified, and piecewise-linear models, model selection rules | 10 | ECE — ties the series together |
| Part 8 | Diode Capacitance, Switching Time, and Diode Testing | Transition and diffusion capacitance, reverse recovery time, spec sheets, diode testing | 10 | ECE — closing topic before Applications series |
How to Use This Series
If you have two weeks before the board exam, work through all eight parts in order over the first week, roughly one post per day. Take the 40-item practice exam at the bottom of this page at the end of week one. Check your score against the answer key. For every item you got wrong, go back to the relevant part of the series, read the worked example that covers that problem type, and solve a similar problem from scratch before moving on.
If you have three days or less, go directly to the formula sheet below. Screenshot it or save it. Then take the practice exam and check your answers. Focus your remaining review time only on the topics where you got items wrong.
| Day | Activity | Time |
|---|---|---|
| Day 1 | Read Part 1 — Ideal Diode Model. Work all 10 problems without looking at solutions first. Write down the ON/OFF switch rule before you close the tab. | 75 minutes |
| Day 2 | Read Part 2 — Semiconductor Materials and Energy Levels. Work all 10 problems. Memorize the three Eg values before moving on: Si 1.1 eV, Ge 0.67 eV, GaAs 1.41 eV. | 75 minutes |
| Day 3 | Read Part 3 — N-Type and P-Type Semiconductors. Work all 10 problems. Drill the majority/minority carrier pairing until it is automatic in both directions. | 75 minutes |
| Day 4 | Read Part 4 — The PN Junction and Diode Biasing. Work all 10 problems. Make sure you can state the forward bias polarity rule from memory without hesitating. | 90 minutes |
| Day 5 | Read Part 5 — Breakdown and the Zener Region. Work all 10 problems. Pay close attention to the PIV versus VZ distinction — this is the most commonly confused pair in the whole series. | 90 minutes |
| Day 6 | Read Part 6 — Temperature Effects and Diode Resistance Levels. Work all 10 problems. Memorize the golden rule: lower current always means higher resistance, in every mode. | 75 minutes |
| Day 7 | Read Part 7 — Diode Equivalent Circuits and Approximation Levels. Work all 10 problems. Practice choosing the correct model from a problem statement before you even start calculating. | 75 minutes |
| Day 8 | Read Part 8 — Diode Capacitance, Switching Time, and Diode Testing. Work all 10 problems. Lock in the CT versus CD pairing before closing the tab. | 75 minutes |
| Day 9 | Take the 40-item practice exam at the bottom of this page. No notes. No formula sheet. Set a 55-minute timer and treat it like the real thing. Write your answers on paper before you scroll down to the key. | 55 minutes |
| Day 10 | Score your exam. For every item you got wrong, read the full solution in the Complete Solutions Post. If you missed three or more in any one part, go back to that part’s post — not just the solutions page — and work through similar problems from scratch. | 60 minutes |
| Day 11 | Review the formula sheet on this page from memory, not by reading it. Solve 5 additional problems of your own choosing without any reference. If you can do that cleanly, you are ready for Diode Applications. | 45 minutes |
Quick Reference Formula Sheet
This consolidated formula sheet covers every key formula from all eight parts of the series. Screenshot this section and keep it accessible during your review. On exam day, every formula on this sheet should come from memory — not from the screenshot.
Ideal diode states:
![\[R_{forward} = 0\ \Omega \qquad R_{reverse} = \infty\ \Omega, \quad I_{reverse} = 0\text{ A}\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-aaa52c2fea60ba03e7d198c7f5036cca_l3.png "Rendered by QuickLaTeX.com")
Practical forward voltage by material:
![\[V_F(\text{Si}) = 0.7\text{ V} \qquad V_F(\text{Ge}) = 0.3\text{ V} \qquad V_F(\text{GaAs}) = 1.2\text{ V}\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-a54a127930fbc4c168558929ec881d5c_l3.png "Rendered by QuickLaTeX.com")
Simplified model current:
![\[I = \dfrac{V_S - V_F}{R}\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-28f6c7321e54381b072ba6169b64fc80_l3.png "Rendered by QuickLaTeX.com")
Conductivity ranges:
![\[\text{Conductor: } 10^3 \text{ to } 10^8\ (\Omega\text{-cm})^{-1} \quad \text{Semiconductor: } 10^{-6} \text{ to } 10^3\ (\Omega\text{-cm})^{-1} \quad \text{Insulator:} \leq 10^{-6}\ (\Omega\text{-cm})^{-1}\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-480b570620f00cdf8baaefd8c97ee99c_l3.png "Rendered by QuickLaTeX.com")
Energy gap by material:
![\[E_g(\text{Si}) = 1.1\text{ eV} \qquad E_g(\text{Ge}) = 0.67\text{ eV} \qquad E_g(\text{GaAs}) = 1.41\text{ eV}\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-04f911a4bbc84f286a232502fa603cbd_l3.png "Rendered by QuickLaTeX.com")
Resistivity-conductivity relationship:
![\[\rho = \dfrac{1}{\sigma} \qquad R = \dfrac{\rho L}{A}\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-5db309642ad705946a503b22e82f7a72_l3.png "Rendered by QuickLaTeX.com")
N-type material: pentavalent (donor) dopant — majority carrier = electron, minority carrier = hole
P-type material: trivalent (acceptor) dopant — majority carrier = hole, minority carrier = electron
Common dopants: antimony, arsenic, phosphorus (n-type) | boron, gallium, indium (p-type)
Bias polarity rules:
![\[\text{Forward: P to } (+),\ \text{N to } (-) \qquad \text{Reverse: P to } (-),\ \text{N to } (+)\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-288e065edb4f49ba614ab32880e72fad_l3.png "Rendered by QuickLaTeX.com")
No bias condition:
![\[V_D = 0\text{ V}, \quad I_D = 0\text{ A}\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-9406b1dde5d3bb74104a092fac8fadf1_l3.png "Rendered by QuickLaTeX.com")
Reverse saturation current temperature rule:
![\[I_s \text{ roughly doubles every } 10^\circ\text{C rise in temperature}\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-375062ca53623902349efb7dc1352d9f_l3.png "Rendered by QuickLaTeX.com")
PIV vs VZ: PIV is the safety limit to stay under; VZ is the actual breakdown voltage, intentional for a Zener diode.
Breakdown mechanism by voltage: Zener mechanism dominates below about 5 V (higher doping); avalanche mechanism dominates at higher voltages (lower doping).
Temperature coefficient: Zener-mechanism VZ has a negative temperature coefficient; avalanche-mechanism VZ has a positive temperature coefficient.
DC (static) resistance:
![\[R_D = \dfrac{V_D}{I_D}\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-49b3e1f87a81bf4a00053c73e4cf1458_l3.png "Rendered by QuickLaTeX.com")
AC (dynamic) resistance at 25°C:
![\[r_d = \dfrac{26\text{ mV}}{I_D}\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-6e008b9b8d94fe17bf4bb1b3d2c1399e_l3.png "Rendered by QuickLaTeX.com")
Average AC resistance:
![\[r_{av} = \dfrac{\Delta V_d}{\Delta I_d}\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-85bedf7950cf4e245bea2c56087ad540_l3.png "Rendered by QuickLaTeX.com")
Golden rule: lower current always means higher resistance, in every mode.
Ideal model: 
, 
Simplified model:
Piecewise-linear model:
![\[I = \dfrac{V_S - V_F}{R + r_{av}} \qquad V_D = V_F + (I_D \times r_{av})\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-6421231a7358baf1c421a6a7b9f16004_l3.png "Rendered by QuickLaTeX.com")
Capacitance by bias: 
(transition) dominates under reverse bias; 
(diffusion) dominates under forward bias, and is typically much larger than .
Reverse recovery time:
![\[t_{rr} = t_s + t_t\]](https://pinoybix.org/wp-content/ql-cache/quicklatex.com-7d4a8eb1ebf38c20b299964958011659_l3.png "Rendered by QuickLaTeX.com")
Testing: good diode = low resistance forward, high resistance reverse. Equal readings both directions = shorted. No conduction either direction = open.
40-Item Practice Exam — All Topics Combined
This practice exam covers all eight parts of the Semiconductor Diode Fundamentals series, with 5 items per part for even topic weighting. Work through all 40 items without notes and without a reference sheet. Time yourself — allow 55 minutes for the full exam. Check your answers against the key at the bottom of this page. For full step-by-step solutions to every item, see the Complete Solutions Post.
- Time allowed: 55 minutes
- Number of items: 40
- Each item has one correct answer from four choices.
- No partial credit — each item is all or nothing.
- Passing score suggestion: 32 out of 40 (80%)
- Do not look at the answer key until you finish all 40 items.
Part A — Ideal Diode Model (Items 1 to 5)
1. Under the ideal diode model, a forward biased diode is equivalent to:
A. An open circuit B. A short circuit C. A resistor D. A capacitor
2. What is the practical forward voltage drop assumed for a silicon diode?
A. 0 V B. 0.3 V C. 0.7 V D. 1.2 V
3. A 5 V source, 1 kΩ resistor, and silicon diode are in series, forward biased. Using the practical model, what is the current?
A. 5 mA B. 4.3 mA C. 3.8 mA D. 4.7 mA
4. Which diode material has the highest practical forward voltage drop?
A. Silicon B. Germanium C. Gallium Arsenide D. All are equal
5. Under the ideal diode model, a reverse biased diode has what resistance value?
A. 0 Ω B. 1 Ω C. ∞ Ω D. Depends on current
Part B — Semiconductor Materials and Energy Levels (Items 6 to 10)
6. What is the energy gap (Eg) of silicon?
A. 0.3 eV B. 0.67 eV C. 1.1 eV D. 1.41 eV
7. Which material has the smallest energy gap among Si, Ge, and GaAs?
A. Silicon B. Germanium C. Gallium Arsenide D. They are equal
8. As temperature increases, the resistance of a semiconductor:
A. Increases B. Decreases C. Stays the same D. Becomes infinite
9. A material with conductivity 
is classified as a(n):
A. Conductor B. Semiconductor C. Insulator D. Superconductor
10. A material has a resistivity of 
. How is it classified?
A. Conductor B. Semiconductor C. Insulator D. Cannot be determined
Part C — N-Type and P-Type Semiconductors (Items 11 to 15)
11. A pentavalent impurity added to silicon produces:
A. P-type material B. N-type material C. Intrinsic material D. An insulator
12. In p-type material, the majority carrier is:
A. Electron B. Hole C. Proton D. Neutron
13. Which of the following is a common trivalent dopant?
A. Phosphorus B. Arsenic C. Boron D. Antimony
14. Doped semiconductor material overall is:
A. Positively charged B. Negatively charged C. Electrically neutral D. Charge depends on temperature
15. In n-type material, the minority carrier is:
A. Electron B. Hole C. Proton D. Ion
Part D — The PN Junction and Diode Biasing (Items 16 to 20)
16. Forward bias connects the p-side to:
A. Positive terminal B. Negative terminal C. Ground only D. Either terminal
17. Under reverse bias, the depletion region:
A. Narrows B. Widens C. Disappears D. Stays the same
18. At no bias, the diode current is:
A. Maximum B. Zero C. Equal to Is only D. Negative
19. Reverse saturation current is primarily due to:
A. Majority carriers B. Minority carriers C. Both equally D. Neither
20. Reverse bias connects the n-side to:
A. Positive terminal B. Negative terminal C. Ground only D. Either terminal
Part E — Breakdown and the Zener Region (Items 21 to 25)
21. PIV stands for:
A. Peak Inverse Voltage B. Peak Input Voltage C. Positive Inverse Voltage D. Peak Internal Voltage
22. Zener breakdown is dominant at:
A. High voltages, low doping B. Low voltages, high doping C. High voltages, high doping D. Low voltages, low doping
23. A diode with 
V most likely breaks down via:
A. Zener mechanism B. Avalanche mechanism C. Thermal runaway only D. Neither
24. As temperature increases, a Zener-mechanism diode’s 
typically:
A. Increases B. Decreases C. Stays exactly the same D. Becomes zero
25. A diode has a forward threshold voltage of 0.3 V. What material is it most likely made of?
A. Silicon B. Germanium C. Gallium Arsenide D. Cannot be determined
Part F — Temperature Effects and Diode Resistance Levels (Items 26 to 30)
26. DC resistance is calculated using:
A. 
B. 
C. 
D. 
27. At 25°C, the AC resistance formula is:
A. 
B. C. 
D. 
28. As diode current increases, its AC resistance:
A. Increases B. Decreases C. Stays constant D. Becomes negative
29. Average AC resistance requires:
A. One point on the curve B. Two points on the curve C. No data D. Temperature only
30. A diode operates at 
mA at 25°C. Find its AC resistance.
A. 13 Ω B. 26 Ω C. 2 Ω D. 52 Ω
Part G — Diode Equivalent Circuits and Approximation Levels (Items 31 to 35)
31. Which diode model assumes zero forward voltage drop?
A. Ideal B. Simplified C. Piecewise-linear D. None of these
32. The piecewise-linear model includes:
A. Switch only B. Switch and battery C. Switch, battery, and resistor D. Battery only
33. Which model is most accurate?
A. Ideal B. Simplified C. Piecewise-linear D. All are equally accurate
34. Which model includes only a switch, with no battery or resistor?
A. Ideal B. Simplified C. Piecewise-linear D. None of these
35. A circuit problem gives 
but no resistance value for the diode. Which model should be used?
A. Ideal B. Simplified C. Piecewise-linear D. Cannot be solved
Part H — Diode Capacitance, Switching Time, and Diode Testing (Items 36 to 40)
36. Transition capacitance (CT) dominates under:
A. Forward bias B. Reverse bias C. No bias D. Breakdown only
37. Reverse recovery time is the sum of:
A. Storage time and transition time B. Rise time and fall time C. Charge time and discharge time D. None of these
38. A diode showing equal resistance readings in both directions on an ohmmeter is likely:
A. Good B. Open C. Shorted D. A Zener diode
39. Diffusion capacitance (CD) is typically __ compared to transition capacitance (CT) in the same diode.
A. Smaller B. Larger C. Equal D. Zero
40. A curve tracer shows a diode’s complete I-V characteristic instead of a simple pass/fail reading. What is the main advantage of this over a basic ohmmeter check?
A. It is faster B. It shows the full I-V curve for detailed comparison C. It requires no power D. It works on open diodes only
Finished all 40 items? Check your work on the Semiconductor Diode Fundamentals — Practice Exam Solutions page, where every answer is explained item by item.
Answer Key
Full step-by-step solutions for every item are in the Complete Solutions Post — all 40 items in Given, Find, Solution format with examiner notes on each one.
| Item | Answer | Topic | Quick Explanation |
|---|---|---|---|
| 1 | B | Ideal Diode Model | Forward biased ideal diode = short circuit, R = 0 Ω. |
| 2 | C | Ideal Diode Model | Standard silicon threshold voltage is 0.7 V. |
| 3 | B | Ideal Diode Model | I = (5 − 0.7)/1000 = 4.3 mA. |
| 4 | C | Ideal Diode Model | GaAs has the highest VF at 1.2 V. |
| 5 | C | Ideal Diode Model | Ideal reverse bias = open circuit, R = ∞ Ω. |
| 6 | C | Materials and Energy Levels | Silicon Eg = 1.1 eV. |
| 7 | B | Materials and Energy Levels | Germanium has the smallest Eg at 0.67 eV. |
| 8 | B | Materials and Energy Levels | Semiconductors have a negative temperature coefficient. |
| 9 | C | Materials and Energy Levels | 10⁻¹⁰ falls below the insulator threshold of 10⁻⁶. |
| 10 | B | Materials and Energy Levels | σ = 1/200 = 5×10⁻³, within the semiconductor range. |
| 11 | B | N-Type and P-Type | Pentavalent dopant = donor atom = n-type material. |
| 12 | B | N-Type and P-Type | P-type majority carrier is the hole. |
| 13 | C | N-Type and P-Type | Boron is a trivalent (acceptor) dopant; the others are pentavalent. |
| 14 | C | N-Type and P-Type | Doped material remains electrically neutral overall. |
| 15 | B | N-Type and P-Type | N-type minority carrier is the hole. |
| 16 | A | PN Junction and Biasing | Forward bias: P-side to positive terminal. |
| 17 | B | PN Junction and Biasing | Reverse bias widens the depletion region. |
| 18 | B | PN Junction and Biasing | At no bias, ID = 0 A (though a depletion region still exists). |
| 19 | B | PN Junction and Biasing | Reverse saturation current Is is due to minority carriers. |
| 20 | A | PN Junction and Biasing | Reverse bias: N-side to positive terminal. |
| 21 | A | Breakdown and Zener Region | PIV = Peak Inverse Voltage. |
| 22 | B | Breakdown and Zener Region | Zener breakdown dominates at low voltages with high doping. |
| 23 | B | Breakdown and Zener Region | 75 V is a high breakdown voltage — avalanche mechanism. |
| 24 | B | Breakdown and Zener Region | Zener-mechanism VZ has a negative temperature coefficient. |
| 25 | B | Breakdown and Zener Region | 0.3 V threshold matches germanium. |
| 26 | A | Resistance Levels | DC resistance: RD = VD/ID. |
| 27 | B | Resistance Levels | AC resistance at 25°C: rd = 26mV/ID. |
| 28 | B | Resistance Levels | Higher current means lower rd — inverse relationship. |
| 29 | B | Resistance Levels | Average AC resistance needs two points to form a secant line. |
| 30 | A | Resistance Levels | rd = 26mV/2mA = 13 Ω. |
| 31 | A | Equivalent Circuits | The ideal model assumes VF = 0 V. |
| 32 | C | Equivalent Circuits | Piecewise-linear = switch + battery + resistor (rav). |
| 33 | C | Equivalent Circuits | Piecewise-linear is the most accurate of the three models. |
| 34 | A | Equivalent Circuits | Ideal model = switch only, no battery or resistor. |
| 35 | B | Equivalent Circuits | VF given, no resistance term = simplified model. |
| 36 | B | Capacitance and Testing | CT (transition capacitance) dominates under reverse bias. |
| 37 | A | Capacitance and Testing | trr = ts (storage time) + tt (transition time). |
| 38 | C | Capacitance and Testing | Equal readings both directions indicate a shorted diode. |
| 39 | B | Capacitance and Testing | CD is typically much larger than CT in the same diode. |
| 40 | B | Capacitance and Testing | Curve tracer shows the full I-V curve for detailed comparison. |
Score Interpretation
Match your score out of 40 against the bands below to see where you stand and what to do next.
| Score | Percentage | Reading | What to Do |
|---|---|---|---|
| 36 to 40 | 90% to 100% | Board Exam Ready | Check your missed items. If they cluster in one part, read that post once more. Otherwise move on to the Diode Applications series. |
| 28 to 35 | 70% to 87% | Passing Level | Find which parts you missed the most. Go back to those posts and work through the problems again from scratch, no solutions in front of you. |
| 20 to 27 | 50% to 67% | Needs More Work | Reread all eight parts from the beginning. Work every problem without peeking. Take this exam again in three days. |
| Below 20 | Below 50% | Start Over | Go back to Part 1 and read it completely before touching any problems. The foundation is not there yet. That is fine — this series fixes that if you work through it properly. |
Frequently Asked Questions
Q1. Which part of this series should I study first if I have only one day before the board exam?
Start with the formula sheet on this page. Screenshot it and study it for 30 minutes. Then read only the Board Exam Quick Tips section from Part 1 and Part 4, since the ideal-versus-practical model and bias polarity rules are the two most frequently tested concepts. With one day remaining, targeted review of high-yield rules is more effective than reading full post content from beginning to end.
Q2. Is the PIV versus VZ distinction really tested as often as this series suggests?
Yes. It is one of the most commonly confused pairs on the ECE board exam specifically because the two values describe closely related but functionally opposite roles. See Part 5 for the complete distinction and worked examples of how examiners frame this trap.
Q3. Do I need to memorize all three diode resistance formulas or will one be enough?
Memorize all three. Board exam items specify which resistance type they want, and using the wrong formula produces a wrong numeric answer even with correct arithmetic. See Part 6 for when each one applies.
Q4. How is this series connected to the Diode Applications series?
Every rectifier, clipper, clamper, and Zener regulator circuit in the Diode Applications series assumes you already know the ideal and practical diode models, PN junction biasing, and breakdown behavior covered here. This series is the prerequisite, not a parallel or optional track.
Q5. What is the next series after Semiconductor Diode Fundamentals on PinoyBIX?
The Diode Applications series continues directly from here, covering rectification, diode configurations, DC load line analysis, clippers, clampers, Zener voltage regulators, voltage multipliers, and special purpose diodes. Follow the PinoyBIX Facebook page to get notified of new posts.
What Is Next
Everything you need to pass the semiconductor diode fundamentals section of the ECE or EE board exam is in this series. The practice exam above gives you your score. The Complete Solutions Post gives you the step-by-step answer to every one of the 40 items. The eight series posts give you the detailed worked examples when you need to rebuild a specific skill from the ground up.
The next series is Diode Applications — the natural continuation of everything covered here. Follow PinoyBIX on Facebook to get notified when new posts go live.
Published by PinoyBIX.org — Engineering Education for Every Filipino Student. Electronics · Mathematics · Board Exam Review · Free for Everyone.
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