Floyd Self-test in Field-Effect Transistors (FETs) – Answers

(Last Updated On: December 8, 2017)

Answers for Floyd Self-test in Chapter 8 of Electronic Devices

Below are the answers key for Floyd Self-test in Chapter 8: Field-Effect Transistors (FETs) from the book Electronic Devices Conventional Current Version, 9th edition by Thomas L. Floyd.

1. answers (a) and (b)

2. drain and source

3. the gate-to-source pn junction reverse-biased

4. VP

5. pinch-off and breakdown

6. the maximum possible drain current

7. the gate-to-source bias voltage decreases

8. 15 mA

9. completely closed by the depletion region

10. is – 4 V

11. is an n channel

12. 1000 MΩ

13. 2.34 V

14. 0 V

15. all of these

16. biased in the ohmic region

17. answers (b) and (c)

18. the JFET has a pn junction

19. both the depletion and enhancement modes

20. the enhancement mode

21. 0 A

22. reaches VGS(th)

23. all of these

24. is 20 mA

25. high-voltage applications

Complete List of Floyd Self-test in Electronic Devices

Floyd Self-test in Field-Effect Transistors (FETs) – Answers
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