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Electronics Engineering Review Materials: Section 1 Module 26

Electronics Review Materials: Section 1 Module 26

This is the Section 1 Module 26 of the compiled Electronics Review Materials taken from different sources including not limited to Electronics books, past Board Exams Questions, Journals and the Internet. This particular reviewer in Electronics Engineering has random Questions and Answers in random topics. Make sure to familiarize each questions to increase the chance of passing the ECE Board Exam.

Electronics Engineering Reviewers: Section 1 Module 26

1. For Reverse PN junction

the C increase as Reverse PN junction decrease

2. What exist in 0 K

the valence and conduction band do not overlap

3. In forward bias

decrease in potential barrier

4. In reversed bias cause

increase in potential barrier

5. Annealed Silver

108.8%conductivity

6. Annealed Copper

102% conductivity

7. Difference of CB to CE

larger current amplification for CE

8. Method of substitution of V and I

Substitution theorem

9. Superposition Theorem

needs Linear and Bilateral

10. Charge that exist in both direction of a PN junction

fixed donor and acceptor ion

11. ICBO

collector to base current

12. Early Condition exist in BJT

base narrowing

13. For CE

VCB versus IB varies constantly to VCE

14. For Beta

VCB versus IC varies constantly to IB

15. For CB

VCB versus IC varies constantly to IE

16. Comparison of mesh and Branch current

mesh is a assumed current while branch is a actual Current and mesh will not divide to branch

17. Conductor resistance

10^-4 to 10^-6 ohms

18. Semiconductor resistance

10^-4 to 10^9 ohms

19. Insulator resistance

10^9 to 10^25 ohms

20. Potentiometer color for “always counterclockwise”

yellow

21. Potentiometer color for “always clockwise”

green

22. Potentiometer color for “wiper”

red

23. Potentiometer color for “color not used”

blue

24. 99% of gold

72.6% conductivity

25. 99.2% of aluminum

63% conductivity

26. For max transformer coupled Class A

50% efficient

27. Transformer coupling will Increase the Class

efficiency

28. What is larger R between12gauge copper wire versus 12gauge aluminum wire

aluminum

29. Why emitter is heavily doped

more power dissipation

30. When wire increase to 0-40D

the diameter decrease

31. What Resistor is not suitable to 50Khz

wire wound resistor

32. High frequency Resistor

film type resistor

33. High level language for low level machine programming

C language

34. LED operates in

reverse bias

35. Peak inverse voltage SI diode

1000V

36. Maximum forward I for SI diode

600A

37. Signal handling capacity of a transistor must exist

operating point must be near operating point

38. Intrinsic Semiconductor

InP

39. Add to Si to be intrinsic

Antimony

40. For 1000K water decrease by 25% is

1333

41. No molecular movement in temp.

absolute zero

42. For Class A

30K

43. Lead Temperature

7.26K

44. Aluminum temperature

1.2K

45. Full wave current of the diode exist in

half cycle

46. Half wave rectifier exist in

less the half cycle

47. If the loop in Kirchhoff’s Law is not completed

the algebraic sum of voltage is from start to end

48. Difference of NPN to PNP

they differ in majority carrier hole for PNP and electron for NPN

49. Not included in memory processor

interrupt

50. Transistor terminal voltage

terminal increase than common terminal

51. Common Emitter

medium Ri, high Ro

52. Common Base

Low Ri, high Ro

53. In transistor, emitter has

Low resistance

54. Hold next instruction

program counter

55. Special register that Hold current instruction

instruction register

56. Increase in internal resistance of collector

can cause smaller voltage gain

57. Avalanche breakdown occurs when

reverse current meets a maximum value

58. DC load line has

negative slope

59. The amount of minority carriers vary in

potential barrier

60. Increase in current that generates more heat and the cycle repeats itself

thermal runaway

61. Peak voltage of a transformer is VM. What is it maximum voltage in diode

VM

62. The arrow in the symbol of a transistor

hole pointing towards emitter

63. How to get the max heat of a line by connecting

all in parallel

64. Zero depletion region

equal number of Majority and minority carrier

65. Improper biasing

cause distortion

66. What exists in depletion region of a PN junction?

Fixed acceptor and Donor ions

67. Transistor PN junction

base to emitter (Forward Bias) Base to collector (Reverse Bias)

68. Principal node

branch current can Combines and divide

69. Small increase in reverse biased in base to collector

large increase in Collector current

70. Current that flows in RB (reversed bias)

minority carrier

71. Opposes barrier potential

majority carrier

72. PNP, electrons flow

collector to base

73. 1KWh

860kcal

74. Current in emitter

designated as ICO

75. ICEO

current in collector in

76. ICBO current

increase with temperature

77. In PN junction, why does holes flow from P to N junction?

Because there are more holes in the P junction

78. Positive Swing, transistor should be clipped?

-cut-off

79. Increase in collector resistance

-large change in collector current

80. Reverse bias

-produce small majority carriers

81. ICBO current

-flows in collector and base leads

82. Increase in holes and electron carriers os because of

-thermal carrier progression

83. Reverse bias current

-increase the flow of minority carriers

84. Collector current in a common emitter increase

-By decrease recombination of carrier to base

85. Zener diode

-operates in reverse bias

86. The Q is zero and can be increase by excitation

-class B

87. PN junction electron exists from low to high value. When a rapid increase in voltage to increase in the current.

-the minority carrier increase to get to the avalanche region

88. PN junction electron exists from low to high value. When a rapid increase in voltage to increase in the current.

-only if its potential barrier exceeds certain limit

89. Difference between triode and N-channel JFET

triode needs more voltage

90. Transistor quiescent occur when

-no signal applied

91. The capacitance in a reverse biased diode

-depend on the intensity of the reverse voltage

92. The potential barrier is responsible on

-the increase of minority carriers

93. Zener diode works as voltage regulator

reverse bias

94. Small amount of majority carriers in PN junction cause from

-the magnitude of potential barrier

Section 1 Modules: Reviewers in Electronic Engineering

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