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# Floyd Self-test in Bipolar Junction Transistors

This is the Self-test in Chapter 4: Bipolar Junction Transistors from the book Electronic Devices Conventional Current Version, 9th edition by Thomas L. Floyd. If you are looking for a reviewer in Electronics Engineering this will definitely help you before taking the Board Exam.

#### Floyd Self-test Chapter 4 Topic Outline

• Floyd Self-test in Bipolar Junction Transistor (BJT) Structure
• Floyd Self-test in Basic BJT Operation
• Floyd Self-test in BJT Characteristics and Parameters
• Floyd Self-test in The BJT as an Amplifier
• Floyd Self-test in The Phototransistor
• Floyd Self-test in The BJT as a Switch
• Floyd Self-test in Transistor Categories and Packaging

If you are looking for the Multiple Choice Questions in Floyd’s Electronic Devices proceed to

#### Start Practice Exam Test Questions

Choose the letter of the best answer in each questions.

1. The three terminals of a bipolar junction transistor are called

(a) p, n, p

(b) n, p, n

(c) input, output, ground

(d) base, emitter, collector

Solution:

2. In a pnp transistor, the p region are

(a) base and emitter

(b) base and collector

(c) emitter and collector

Solution:

3. For operation as an amplifier, the base of an npn transistor must be

(a) positive with respect to the emitter

(b) positive with respect to the collector

(c) negative with respect to the emitter

(d) 0V

Solution:

4. The emitter current is always

(a) greater than the base current

(b) less than the collector current

(c) greater than the collector current

Solution:

5. The ฮฒdc of a transistor is its

(a) current gain

(b) voltage gain

(c) power gain

(d) internal resistance

Solution:

6. If Ic is 50 times larger than Ib, then ฮฒdc is

(a) 0.02

(b) 100

(c) 50

(d) 500

Solution:

7. The approximate voltage across the forward-biased base-emitter junction of silicon BJT is

(a) 0V

(b) 0.7

(c) 0.3

(d) VBB

Solution:

8. The bias condition for a transistor to be used as a linear amplifier is called

(a) forward-reverse

(b) forward-forward

(c) reverse-reverse

(d) collector bias

Solution:

9. If the output of a transistor amplifier is 5V rms and the input is 100mV rms, the voltage gain is

(a) 5

(b) 500

(c) 50

(d) 100

Solution:

10. When a lowercase rโ is used in relation to a transistor, it refers to

(a) a low resistance

(b) a wire resistance

(c) an internal ac resistance

(d) a source resistance

Solution:

11. In a given transistor amplifier, Rc= 2.2 kโฆ and rโe =20โฆ, the voltage gain is

(a) 2.2

(b) 110

(c) 20

(d) 44

Solution:

12. When operated in cutoff and saturation, the transistor acts like a

(a) linear amplifier

(b) switch

(c) variable capacitor

(d) variable resistor

Solution:

13. In cutoff, Vce is

(a) 0V

(b) minimum

(c) maximum

(d) equal to Vcc

Solution:

14. In saturation, Vce is

(a) 0.7V

(b) equal to Vcc

(c) minimum

(d) maximum

Solution:

15. To saturate a BJT,

(a) Ib= Ic(sat)

(b) Ib>Ic(sat)/ฮฒdc

(c) Vcc must be at least 10V

(d) the emitter must be grounded

Solution:

16. Once in saturation, a further increase in base current will

(a) cause the collector current to increase

(b) not affect the collector current

(c) cause the collector current to decrease

(d) turn the transistor off

Solution:

17. In a phototransistor, base current is

(a) set by a bias voltage

(b) directly proportional to light intensity

(c) inversely proportional to light intensity

(d) not a factor

Solution:

18. The relationship between the collector current and a light-generated base current is

(a) Ic= ฮฒdcIฮป

(b) Ic= ฮฑdcIฮป

(c) Ic= ฮปฮป

(d) Ic= ฮฒ2dcIฮป

Solution:

19. An optocoupler usually consists of

(a) two LEDs

(b) an LED and a photodiode

(c) an LED and a phototransistor

(d) both (b) and (c)

Solution:

20. In a transistor amplifier, if the base-emitter junction is open, the collector voltage is

(a) Vcc

(b) 0V

(c) floating

(d) 0.2V

Solution:

21. A DMM measuring on open transistor junction shows

(a) 0V

(b) 0.7V

(c) OL

(d) Vcc

Solution:

### Complete List of Floyd Self-test in Electronic Devices

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