MCQ in Electronic Circuits Part 11 | ECE Board Exam

This is the Multiple Choice Questions in Electronic Circuits (Electronic Devices and Circuits, Electronic Circuit Analysis and Design) Part 11 of the Series as one of the Electronics Engineering Examination topic. In Preparation for the ECE Board Exam make sure to expose yourself and familiarize in each and every questions compiled here taken from various sources including but not limited to past Board Exam Questions in Electronics Engineering field, Electronics Books, Journals and other Electronics References.

MCQ Topic Outline included in ECE Board Exam Syllabi

4. Electronic Devices and Circuits

• MCQ in Diode Wave Shaping Circuits and Special Diode Applications
• MCQ in BJT and FET Small Signal Analysis
• MCQ in Diode Equivalent Circuits
• MCQ in Voltage Multipliers, Power Supply, and Voltage Regulation
• MCQ in Bipolar Junction Transistor and FET

5. Electronic Circuit Analysis and Design

• MCQ in BJT and FET Frequency Response
• MCQ in Cascade and Cascode Connections
• MCQ in Current Mirrors and Current Source
• MCQ in Differential and Operational Amplifier
• MCQ in Feedback Systems, Oscillators, and Filters

Continue Practice Exam Test Questions Part 11 of the Series

⇐ MCQ in Electronic Circuits Part 10 | ECE Board Exam

Choose the letter of the best answer in each questions.

501. A transistor has how many PN junctions?

A. 1

B. 2

C. 3

D. 4

502. In an NPN transistor, the majority carriers in the emitter are

A. free electrons

B. holes

C. neither

D. both

503. The barrier potential across each silicon depletion layer is

A. 0 v

B. 0.3 v

C. 0.7 v

D. 1 v

504. The base of an NPN transistor is thin and

A. heavily doped

B. lightly doped

C. metallic

D. doped by a pentavalent material

505. The emitter of a transistor is generally doped the heaviest because it

A. has to dissipate maximum power

B. has to supply the charge carriers

C. is the first region of the transistor

D. must possess low resistance

506. When a transistor is fully switched ON, it is said to be

A. shorted

B. saturated

C. open

D. cut-off

507. A FET consists of a

A. source

B. drain

C. gate

D. all the above

508. The extremely high input impedance of a MOSFET is primarily due to the

A. absence of its channel

B. negative gate- source voltage

C. depletion of current carriers

D. extremely small leakage current of its gate capacitor

509. When a transistor is used as a switch, it is stable in which two distinct regions?

A. saturation and active

B. active and cutoff

C. saturation and cutoff

D. none of the above

510. The term BJT is short for

A. base junction transistor

B. binary junction transistor

C. both junction transistor

D. bipolar junction transistor

511. What are the two types of bipolar junction transistors?

A. NPN and PNP

B. PNN and NNP

C. PPN and NNP

D. PTS and STP

512. The magnitude of dark current in a phototransistor usually falls in what range?

A. ma

B. ma

C. na

D. pa

513. Junction Field Effect Transistors (JFET) contain how many diodes?

A. 4

B. 3

C. 2

D. 1

514. When not in use, MOSFET pins are kept at the same potential through the use of:

A. shipping foil

B. nonconductive foam

C. conductive foam

D. a wrist strap

515. A MOSFET has how many terminals?

A. 2 or 3

B. 3

C. 4

D. 3 or 4

516. A very simple bias for a D-MOSFET is called:

A. self biasing

B. gate biasing

C. zero biasing

D. voltage- divider biasing

517. Hybrid means

A. mixed

B. single

C. biunique

D. none of the above

518. There are h- parameters of a transistor.

A. two

B. four

C. three

D. none of the above

519. The h- parameter approach gives correct results for

A. large signals only

B. small signals only

C. both small and large signals

D. none of the above

520. If the operating point changes, the h-parameters of transistor

A. also change

B. do not change

C. may or may not change

D. none of above

521. The dc load line on a family of collector characteristic curves of a transistor shows the

A. saturation region.

B. cutoff region.

C. active region.

D. all of the above

522. When a transistor is used as a switch, it is stable in which two distinct regions?

A. saturation and active

B. active and cutoff

C. saturation and cutoff

D. none of the above

523. The value of βDC

A. is fixed for any particular transistor.

B. varies with temperature.

C. varies with i_c.

D. varies with temperature and i_c.

524. A BJT has an IB of 50 µA and a β_DC of 75; I_C is:

A. 375 ma

B. 37.5 ma

C. 3.75 ma

D. 0.375 ma

525. A certain transistor has I_C = 15 mA and I_B = 167 µA; β_DC is:

A. 15

B. 167

C. 0.011

D. 90

526. For normal operation of a PNP BJT, the base must be with respect to the emitter and with respect to the collector.

A. positive, negative

B. positive, positive

C. negative, positive

D. negative, negative

527. A transistor amplifier has a voltage gain of 100. If the input voltage is 75 mV, the output voltage is:

A. 1.33 v

B. 7.5 v

C. 13.3 v

D. 15 v

528. A 35 mV signal is applied to the base of a properly biased transistor with an r’e = 8 Ω and R_C = 1 kΩ. The output signal voltage at the collector is:

A. 3.5 v

B. 28.57 v

C. 4.375 v

D. 4.375 mv

529. What is the order of doping, from heavily to lightly doped, for each region?

A. base, collector, emitter

B. emitter, collector, base

C. emitter, base, collector

D. collector, emitter, base

530. Which of the following is true for an NPN or PNP transistor?

A. ie = ib + ic

B. ib = ic+ ie

C. ic = ib + ie

D. none of the above

531. In what range of voltages is the transistor in the linear region of its operation?

A. 0 < vce

B. 0.7 < vce < vce_(max)

C. vce_(max) > vce

D. none of the above

532. What does DC vary with?

A. ic

B. °c

C. both ic and °c

D. ic’, but not °c

533. What is (are) common fault(s) in a BJT-based circuit?

A. pens or shorts internal to the transistor

B. open bias resistor(s)

C. external opens and shorts on the circuit board

D. all of the above

534. What is (are) general-purpose/small-signal transistors case type(s)?

A. to-18

B. to-92

C. to-39

D. all of the above

535. The magnitude of dark current in a phototransistor usually falls in what range?

A. ma

B. μa

C. na

D. pa

536. Which of the following devices has the highest input resistance?

A. diode

B. jfet

C. mosfet

D. bipolar junction transistor

537. A self-biased n-channel JFET has a V_D = 6 V. V_GS = –3 V. Find the value of V_DS.

A. –3 v

B. –6 v

C. 3 v

D. 6 v

538. A JFET data sheet specifies VGS(off) = –6 V and I_DSS = 8 mA. Find the value of I^D when V_GS = –3 V.

A. 2 ma

B. 4 ma

C. 8 ma

D. none of the above

539. A JFET data sheet specifies V_GS(off) = –10 V and I_DSS = 8 mA. Find the value of I_D when V_GS = –3 V.

A. 2 ma

B. 1.4 ma

C. 4.8 ma

D. 3.92 ma

540. The JFET is always operated with the gate-source PN junction-biased.

A. forward

B. reverse

C. all of the above

D. none of the above

541. What type(s) of gate-to-source voltage(s) can a depletion MOSFET (D-MOSFET) operate with?

A. zero

B. positive

C. negative

D. any of the above

542. The has a physical channel between the drain and source.

A. d-mosfet

B. e-mosfet

C. v-mosfet

D. none of the above

543. All MOSFETs are subject to damage from electrostatic discharge (ESD).

A. true

B. false

544. Midpoint bias for a D-MOSFET is I_D = , obtained by setting V_GS = 0.

A. idss /2

B. idss /3.4

C. idss

D. None of these

545. If VD is less than expected (normal) for a self-biased JFET circuit, then it could be caused by a(n)

A. open rg.

B. open gate lead.

C. fet internally open at gate.

D. all of the above

546. A coupling capacitor is

A. a dc short

B. an ac open

C. a dc open and an ac short

D. a dc short and an ac open

547. In a bypass circuit, the top of a capacitor is

A. an open

B. a short

C. an ac ground

D. a mechanical ground

548. The capacitor that produces an ac ground is called a

A. bypass capacitor

B. coupling capacitor

C. dc open

D. ac open

549. The output voltage of a CE amplifier is

A. amplified

B. inverted

C. 180° out of phase with the input

D. all of the above

550. A common-gate amplifier is similar in configuration to which BJT amplifier?

A. common-emitter

B. common- collector

C. common-base

D. emitter- follower

Questions and Answers in Electronic Circuits

Following is the list of practice exam test questions in this brand new series:

Complete List of MCQ in Electronics Engineering per topic