Floyd Self-test in Introduction to Semiconductors

(Last Updated On: December 8, 2017)
Floyd Self-test in Chapter 1 of Electronic Devices

This is the Self-test in Chapter 1: Introduction to Semiconductors from the book Electronic Devices Conventional Current Version, 9th edition by Thomas L. Floyd. If you are looking for a reviewer in Electronics Engineering this will definitely help you before taking the Board Exam.

Floyd Self-test Chapter 1 Topic Outline

  • Floyd Self-test in Atom
  • Floyd Self-test in Materials Used in Electronics
  • Floyd Self-test in Current in Semiconductors
  • Floyd Self-test in N-Type and P-Type Semiconductors
  • Floyd Self-test in The PN Junction

Start Practice Exam Test Questions

Choose the letter of the best answer in each questions.

1. Every known element has

  • (a) the same type of atoms
  • (b) the same number of atoms
  • (c) a unique type of atom
  • (d) several different types of atoms

2. An atom consists of

  • (a) one nucleus and only one electron
  • (b) one nucleus and one or more electrons
  • (c) protons, electrons, and neutrons
  • (d) answers (b) and (c)

3. The nucleus of an atom is made up of

  • (a) protons and neutrons
  • (b) electrons
  • (c) electrons and protons
  • (d) electrons and neutrons

4. Valence electrons are

  • (a) in the closest orbit to the nucleus
  • (b)in the most distant orbit from the nucleus
  • (c)in various orbits around the nucleus
  • (d) not associated with a particular atom

5. A positive ion is formed when

  • (a) a valence electron breaks away from the atom
  • (b)there are more holes than electrons in the outer orbit
  • (c)two atoms bond together
  • (d)an atom gains an extra valence electron

6. The most widely used semiconductive material in electronic devices is

  • (a)germanium
  • (b) carbon
  • (c) copper
  • (d) silicon

7. The difference between an insulator and a semiconductor is

  • (a)a wider energy gap between the valence band and the conduction ban
  • (b)the number of free electrons
  • (c) the atomic structure
  • (d) answers(a), (b), and (c)

8. The energy band in which free electrons exist is the

  • (a) first band
  • (b) second band
  • (c) conduction band
  • (d) valence band

9. In a semiconductor crystal, the atoms are held together by

  • (a) the interaction of valence electrons
  • (b) forces of attraction
  • (c) covalent bonds
  • (d)answers (a), (b), and (c)

10. The atomic number of silicon is

  • (a) 8
  • (b) 2
  • (c) 4
  • (d) 14

11. The atomic number of germanium is

  • (a) 8
  • (b) 2
  • (c) 4
  • (d) 32

12. The valence shell in a silicon atom has the number designation of

  • (a) 0
  • (b) 1
  • (c) 2
  • (d) 3

13. Each atom in a silicon crystal has

  • (a) four valence electrons
  • (b)four conduction electrons
  • (c) eight valence electrons, four of its own and four shared
  • (d) no valence electrons because all are shared with other atoms

14. Electron-hole pairs are produced by

  • (a) recombination
  • (b) thermal energy
  • (c) ionization
  • (d) doping

15. Recombination is when

  • (a) an electron falls into a hole
  • (b) and a negative ion bond together
  • (c) a valence electron becomes a conduction electron
  • (d)a crystal is formed

16. The current in a semiconductor is produced by

  • (a) electrons only
  • (b) holes only
  • (c) negative ions
  • (d) both electrons and holes

17. In an intrinsic semiconductor,

  • (a) there are no free electrons
  • (b) the free electrons are thermally produced
  • (c) there are only holes
  • (d) there are as many electrons as there are holes
  • (e) answers (b) and (d)

18. The process of adding an impurity to an intrinsic semiconductor is called

  • (a) doping
  • (b) recombination
  • (c)atomic modification
  • (d) ionization

19. A trivalent impurity is added to silicon to create

  • (a) germanium
  • (b) a p-type semiconductor
  • (c) an n-type semiconductor
  • (d) a depletion region

20. The purpose of a pentavalent impurity is to

  • (a) reduce the conductivity of silicon
  • (b) increase the number of holes
  • (c) increase the number of free electrons
  • (d)create minority carriers

21.The majority carriers in an n-type semiconductor are

  • (a) holes
  • (b) valence electrons
  • (c) conduction electrons
  • (d) protons

22. Holes in an n-type semiconductor are

  • (a) minority carriers that are thermally produced
  • (b) minority carriers that are produced by doping
  • (c) majority carriers that are thermally produce
  • (d)majority carriers that are produced by doping

23.A pn junction is formed by

  • (a) the recombination of electrons and holes
  • (b) ionization
  • (c) the boundary of a p-type and an n-type material
  • (d) the collision of a proton and a neutron

24. The depletion region is created by

  • (a) ionization
  • (b) diffusion
  • (c) recombination
  • (d) answers (a), (b), and (c)

25. The depletion region consists of

  • (a) nothing but minority carriers
  • (b) positive and negative ions
  • (c) no majority carriers
  • (d) answers(b) and (c)

26. The term bias means

  • (a) the ratio majority carriers to minority carriers
  • (b) the amount of current across a diode
  • (c) a dc voltage is applied to control the operation of a device
  • (d) neither (c), (c), nor (c)

27. To forward-bias a diode,

  • (a) an external voltage is applied that is positive at the anode and negative at the cathode
  • (b) an external voltage is applied that is negative at the anode and positive at the cathode
  • (c) an external voltage is applied that is positive at the p region and positive at the n region
  • (d)answers (a) and (c)

28. When a diode is forward-biased,

  • (a) the only current is hole current
  • (b) the only current is electron current
  • (c) the only current is produced by majority carriers
  • (d) the current is produced both holes and electrons

29. Although current is blocked in reverse bias,

  • (a) there is some current due to majority carriers
  • (b) there is a very small current due to minority carriers
  • (c) there is an avalanche current

30. For a silicon diode, the value of the forward-bias voltage typically

  • (a) must be greater than 0.3 V
  • (b) must be greater than 0.7 V
  • (c) depends on the width of the depletion region
  • (d) depends on the concentration of majority carriers

31. When forward-biased, a diode

  • (a) blocks current
  • (b) conducts current
  • (c) has high resistance
  • (d) drops a large voltage

32. A diode is normally operated in

  • (a) reverse breakdown
  • (b) the forward-bias region
  • (c) the reverse-bias region
  • (d) either (b) or (c)

33. The dynamic resistance can be important when a diode is

  • (a) reverse-biased
  • (b) forward-biased
  • (c) in reverse breakdown
  • (d) unbiased

34. The V-I curve for a diode shows

  • (a) the voltage across the diode for a given current
  • (b) the amount of current for a given bias voltage
  • (c) the power dissipation
  • (d) none of these

35. Ideally, a diode can be represented by a

  • (a) voltage source
  • (b) resistance
  • (c) switch
  • (d) all of these

36. In the practical diode model,

  • (a) the barrier potential is taken into account
  • (b) the forward dynamic resistance is taken into account
  • (c) none of these
  • (d) both (a) and (b)

37. In the complete diode model,

  • (a) the barrier potential is taken into account
  • (b) the forward dynamic resistance is taken into account
  • (c) the reverse resistance is taken into account
  • (d) all of these

38. When a silicon diode is working properly in forward-bias, a DMM in the diode test position will indicate

  • (a) 0 V
  • (b) OL
  • (c) approximately 0.7 V
  • (d) approximately 0.3V

39. When a silicon diode is open, a DMM will generate indicate

  • (a) 0 V
  • (b) OL
  • (c) approximately 0.7 V
  • (d) approximately 0.3V

Complete List of Floyd Self-test in Electronic Devices

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