MCQ in Electronic Systems and Design Part 3 | ECE Board Exam

This is the Multiple Choice Questions in Electronic Systems and Design Part 3 of the Series as one of the Electronics Engineering Examination topic. In Preparation for the ECE Board Exam make sure to expose yourself and familiarize in each and every questions compiled here taken from various sources including but not limited to past Board Exam Questions in Electronics Engineering field, Electronics Books, Journals and other Electronics References.

MCQ Topic Outline included in ECE Board Exam Syllabi

6. Electronic Systems and Design

• MCQ in SCR’s, UJT, PUT, TRIAC, DIAC, and other Thyristors
• MCQ in Optoelectronic Devices and Sensors
• MCQ in Transducers, Data Acquisition, and Interfacing Techniques
• MCQ in Programmable Logic Controllers
• MCQ in Design and Integration in Building Management Systems and HVAC Controls,
  Security, Safety, and Surveillance Control Systems, and Audio-Video and Lighting
  Controls
• MCQ in Instrumentation and Control
• MCQ in Welding Systems
• MCQ in Robotic Principles
• MCQ in Bioelectrical Principles

Continue Practice Exam Test Questions Part 3 of the Series

Choose the letter of the best answer in each questions.

101. Referred to a bidirectional trigger diode.

a. Triac

b. UJT

c. BJT

d. Diac

102. Voltage required to turn on any thyristor.

a. Trigger voltage

b. Breakover voltage

c. Barrier voltage

d. Supply voltage

103. Also known as a four-layer diode.

a. Diac

b. Shockley diode

c. Zener diode

d. FET

104. The thyristor counterpart of the unijunction transistor.

a. UJT

b. PUT

c. SBS

d. SCS

105. Minimum current required to keep a thyristor “on”.

a. Holding current

b. Trigger current

c. Supply current

d. Collector current

106. A unidirectional-three terminal device, the most popular of thyristors.

a. SCS

b. Triac

c. UJT

d. SCR

107. The angle of an AC supply voltage during which an SCR is “off”.

a. Conduction angle

b. Firing delay angle

c. Right angle

d. Off angle

108. Thyristors are most often used as

a. Switches

b. Amplifiers

c. Buffers

d. Decoders

109. The total internal series resistance of the UJT.

a. Bulk’s resistance

b. Total resistance

c. Interbase resistance

d. RIS

110. The most popular and typical breakover voltage of a diac.

a. 32 V

b. 16 V

c. 8 V

d. 4 V

111. The peak voltage of a PUT is

a. VD + VBB

b. VG + VBB

c. VD + VG

d. VBB

112. A UJT has η = 0.65 and is connected to a 20 V supply. What is its VEB1?

a. 12 V

b. 13.6 V

c. 12.7 V

d. 14 V

113. The three terminal semiconductor device that acts in either direction.

a. Triac

b. SCR

c. Diac

d. SCS

114. The P of PUT stands for

a. Programmable

b. Performance

c. Peak

d. Post

115. The terminals of a UJT are

a. Gate, Anode, Cathode

b. Anode, Cathode

c. Emitter, Base

d. Emitter, Base1, Base2

116. The lowest current that can prevent the transition of a UJT from conduction to blocking region.

a. Switching current

b. Emitter current

c. Valley current

d. Peak current

117. The SCS has how many gate terminals?

a. 0

b. 1

c. 2

d. 3

118. What device has two terminals connected in inverse-parallel that pass in two directions?

a. Triac

b. Diac

c. Shockley

d. SCR

119. What is the breakover voltage of a PUT if it is connected to a 15 V supply across the gate terminal?

a. 10.7 V

b. 23.7 V

c. 15.7 V

d. 5.3 V

120. The gap between the forward blocking region and the forward conduction region.

a. Band gap

b. Switching region

c. Jump gap

d. Negative resistance region

121. The cathode of the PUT is the counterpart of which terminal in UJT?

a. Anode

b. Base2

c. Emitter

d. Base1

122. An electronic switch that has the highest single device current capacity and can withstand overloads better.

a. Thyratrons

b. Ignitrons

c. SCR

d. Triac

123. Group of devices with 4 or more semiconductor layers.

a. Transistors

b. Diodes

c. Thyristors

d. Op-Amps

124. Identify which of the following is a three layer device.

a. SCS

b. Diac

c. Triac

d. PUT

125. What device can be modeled by a diode and two resistors?

a. BJT

b. DIAC

c. SCR

d. UJT

126. A junction that is formed by adding controlled amounts of an impurity to the melt during crystal growth is termed as

a. Fused junction

b. Unijunction

c. Alloy junction

d. Doped junction

127. A triac is a ________.

a. 2 terminal switch

b. 2 terminal bilateral switch

c. 3 terminal unilateral switch

d. 3 terminal bidirectional switch

128. A thyristor equivalent of a thyratron tube is ________.

a. Diac

b. Triac

c. SCR

d. PUT

129. Which of the following describes a triac?

a. Conducts when not triggered

b. Conducts when not triggered in both directions

c. Conducts when triggered in one direction

d. Conducts when triggered in both direction

130. Minimum anode current to hold a thyristor at conduction.

a. Trigger

b. Maintaining current

c. Holding current

d. Threshold voltage

131. General term for semiconductor devices primarily used as switches.

a. Shockley

b. Thyratron

c. Thyristor

d. Relay

132. A two-terminal, unidirectional thyristor.

a. DIAC

b. Shockley

c. TRIAC

d. Diode

133. A thyristor is basically __________.

a. PNPN device

b. A combination of diac and triac

c. A set of SCRs

d. A set of SCR, diac and triac

134. What is the PNPN device with two gates?

a. Diac

b. Triac

c. SUS

d. SCS

135. Which device incorporates a terminal for synchronizing purposes?

a. Diac

b. Triac

c. SUS

d. SCR

136. An SCR is a _________.

a. Unijunction device

b. Device with three junctions

c. Device with four junctions

d. Device with two junctions

137. A thyristor can be turned off

a. By reducing the anode current below the holding current value

b. By reversing the anode voltage

c. Either a or b

d. Both a and b

138. Minimum duration of pulse triggering system for thyristors is ________.

a. At least 10 microseconds

b. At least 30 milliseconds

c. At least 10 milliseconds

d. At least 1 second

139. A device that cannot be triggered by voltage of either polarity is ________.

a. Diac

b. Triac

c. SCS

d. All of the above

140. Technically, what is dicing means?

a. Process of joining two diacs

b. Circuit of reducing noise

c. Device for reducing magnetic and radio interference

d. Process of breaking the silicon slice into chips

141. The term used to describe the process whereby two transistors with positive feedback are used to simulate the action of the thyristor.

a. Arcing

b. Latching

c. Damping

d. Switching

142. It is the minimum anode current to hold a thyristor at conduction.

a. Trigger

b. Maintaining current

c. Holding current

d. Threshold voltage

143. Electron tube containing mercury functioning as a rectifier.

a. Thyratron

b. Ignitron

c. Thyrector

d. SCR

144. How do you stop the conduction during which the SCR is also conducting?

a. Remove voltage gate

b. Increase cathode voltage

c. Interrupt anode current

d. Reduce gate current

145. A series RC connected in parallel with an SCR to eliminate false triggering is the _______.

a. Crowbar

b. Snubber

c. Varistor

d. Eliminator

146. Which are the three terminals of a TRIAC?

a. Gate, anode1 and anode2

b. Gate, source and sink

c. Base, emitter and collector

d. Emitter, base1 and base2

147. The term used to describe the process whereby two transistors with positive feedback are used to simulate the action of the thyristor.

a. Arcing

b. Latching

c. Damping

d. Switching

148. The minimum emitter to base voltage to trigger the UJT is the ________.

a. Forward breakover voltage

b. Trigger

c. Breakdown voltage

d. Peak voltage

149. The ratio of the emitter to base1 resistance to the interbase resistance of a UJT is called ________.

a. Aspect ratio

b. Current gain

c. Voltage gain

d. Intrinsic standoff ratio

150. For a UJT, it is the region between the peak and valley points as seen in its characteristics curve.

a. Active region

b. Negative resistance region

c. Trigger region

d. Saturation region

Questions and Answers in Electronic Systems and Design

Following is the list of multiple choice questions in this brand new series:

Complete List of MCQ in Electronics Engineering per topic