MCQ in Solid State Devices Part 4 – Answers

Below are the answers key for the Multiple Choice Questions in Solid State Devices – MCQS Part IV.

151. The increased conductivity of an illuminated semiconductor junction

152. The conductivity of the material increases

153. Varactor diode

154. Gallium arsenide

155. Atomic mass

156. Atomic number

157. Opposite in sign

158. 1836

159. LAD

160. Red

161. Increases

162. Depletion width

163. Photodiode

164. Saturation region

165. Scale current

166. 0.7 V

167. Forward biased

168. 14 ohms

169. 313 mW

170. A constant voltage under conditions of carrying current

171. Varactor diode

172. Common collector

173. Coupling

174. Collector

175. Tunnel diode

176. Diac

177. Tunnel diode

178. IGFET

179. Saturation region

180. Saturation and active

181. Base 1, base 2 and emitter

182. Silicon and germanium

183. Remains relatively constant

184. Free electrons

185. LED

186.  IR emitters

187. Input characteristic curve

188. Output characteristic curve

189. Less number of electron hole pairs will be generated in silicon than in germanium at room temperature

190. Maximum current and PIV

191. PIN diode

192. Output characteristic

193. RC

194. Frequency response

195. 40.6 %

196. 81.2 %

197. Transformer coupling

198. 0.135

199. Phase-splitter

200. 120 Hz

The Series

Following is the list of multiple choice questions in this brand new series:

Complete List of MCQs in Electronics Engineering per topic

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