MCQ in Solid State Devices Part 5 – Answers

Below are the answers key for the Multiple Choice Questions in Solid State Devices – MCQS Part V.

201. FET

202. Harold Black

203. Always points towards the N region and away from the P region

204. 400 Hertz

205. Twice as great as the input frequency

206. Common emitter circuit

207. The output signal is in phase with the input signal

208. gm = ΔIc/ΔVGS

209. Photodiode

210. Optoelectronic devices

211. Junction and point contact

212. Voltage regulation and voltage reference

213. A negative resistance region

214. Varactor diode

215. Junction temperature

216. Gate, source and drain

217. The collector current is at its maximum value

218. Enhancement-mode FET

219. The are susceptible to damage and static charges

220. -5 volts

221. 250 Ω

222. 3.1 mA

223. JFETs

224. Ohmic

225. Touching

226. Threshold voltage

227. A JFET

228. Approaches infinity

229. High

230. Due to its low inherent internal capacitance and low electron transmit time through the base

231. 50

232. Silicon

233. Heat dissipation

234. Provides higher cut-off frequency

235. Poor frequency response

236.  Maximum

237. 34.77 dBm

238. Two

239. Ionization

240. Parasitic oscillations

241. Linear amplifier

242. Peak inverse voltage

243. Elements

244. LED

245. It is the ratio of the change in collector current to the change in base current.

246. Neutrons

247. Photons

248. Secondary electrons

249. Fission

250. Neutrino

The Series

Following is the list of multiple choice questions in this brand new series:

Complete List of MCQs in Electronics Engineering per topic

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