MCQ in Solid State Devices Part 9 | ECE Board Exam

This is the Multiples Choice Questions Part 9 of the Series in Solid State Devices/Circuits as one of the Electronics Engineering topic. In Preparation for the ECE Board Exam make sure to expose yourself and familiarize in each and every questions compiled here taken from various sources including but not limited to past Board Exam Questions in Electronics Engineering field, Electronics Books, Journals and other Electronics References.

MCQ Topic Outline included in ECE Board Exam Syllabi

• MCQs in Semiconductor Fundamentals
• MCQs in Transistor Components
• MCQs in Circuit Analysis and Design
• MCQs in Special Services (Photo Electric, Photo voltaic)

Continue Practice Exam Test Questions Part 9 of the Series

Choose the letter of the best answer in each questions.

401. The time required for forward voltage or current to reach a specified value after switching the diode from its reverse-to-forward-biased state.

A. reverse recovery time

B. forward recovery time (tfr)

C. saturation time

D. conduction time

402. The maximum power the diode can handle.

A. maximum derating power

B. maximum consumption power

C. breakdown power

D. maximum dissipation power

403. What is the most important specification for semiconductor diode?

A. Forward resistance

B. Reverse resistance

C. Peak inverse voltage

D. Current capacity

404. What will happen to the power handling capability of the diode if it is to be operated at a higher temperature?

A. decreases

B. increases

C. increases exponentially

D. will not be affected

405. Diode parameter that will inform the user as to what factor does the power handling capability of the diode is reduced as the operating temperature is increased.

A. power derating factor

B. power dissipating factor

C. power reduction constant

D. all of the above

406. A certain diode has a maximum power dissipation of 500 mW at room temperature and a linear power derating factor of 5.0 mW/°C. How much power the diode can handle if operated at 50°C.

A. 625 mW

B. 505 mW

C. 495 mW

D. 375 mW

407. A semiconductor device especially fabricated to utilize the avalanche or zener breakdown region. This is normally operated in the reverse-region and its application is mostly for voltage reference or regulation.

A. varactor diode

B. zener diode

C. shockley diode

D. Schottky barrier diode

408. Refers to a special type of diode which is capable of both amplification and oscillation.

A. Junction diode

B. Tunnel diode

C. Point contact diode

D. Zener diode

409. The effect obtain when the electric field across a semiconductor is strong enough which causes the free electrons to collide with valence electrons, thereby releasing more electrons and a cumulative multiplication of charge carriers occur.

A. Gunn

B. avalanche

C. tunneling

D. diffusion

410. A negative resistance diode commonly used in microwave oscillators and detectors, it is sometimes used as amplifiers. This device is also known as Esaki diode.

A. varactor diode

B. Schottky diode

C. IMPATT diode

D. tunnel diode

411. A rectifying metal-semiconductor junction

A. Schottky barrier diode

B. surface barrier diode

C. hot-carrier or hot-electron diode

D. all of the above are correct

412. Diode whose negative resistance depends on a specific form of quantum-mechanical bond structure of the material

A. Gunn diode

B. tunnel diode

C. TRAPATT diode

D. backward diode

413. One of the electronic semiconductor devices known as diac, function as

A. Four terminal multi-directional switch

B. Two terminal bi-directional switch

C. Two terminal unidirectional switch

D. Three terminal bi-directional switch

414. Another name of a three-layer diode. This is also considered as an ac diode.

A. Shockley diode

B. thyrector

C. thyristor

D. diac

415. A diode whose negative resistance is dependent on the classical effects of phase shift introduced by the time lag between maximum field and maximum avalanche current, and by the transit time through the device.

A. Read diode

B. IMPATT diode

C. TRAPATT diode

D. all of the above

416. What semiconductor diode that have a fine wire (called a cat-whisker) whose point is in permanent contact with the surface of a wafer of semiconductor material such as silicon, germanium or gallium arsenide?

A. point-contact diode

B. diac

C. PiN diode

D. thyrector

417. When the p-n junction of a semiconductor diode is inserted with an intrinsic material, the diode becomes a

A. backward diode

B. Read diode

C. Schokley diode

D. PiN diode

418. A four layer semiconductor diode whose characteristic at the first quadrant is similar to that of a silicon-controlled rectifier (SCR).

A. Shockley diode

B. thyrector

C. Schottky diode

D. diac

419. A diode that is especially processed so that its high-current flow takes place when the junction is reverse-biased. It is a variation of a tunnel diode.

A. Esaki diode

B. Read diode

C. zener diode

D. backward diode

420. A silicon diode that exhibits a very high resistance in both directions up to certain voltage, beyond which the unit switches to a low-resistance conducting state. It can be viewed as two zener diodes connected back-to-back in series.

A. bizener diode

B. diac

C. thyristor

D. thyrector

421. A type of Read diode that uses a heavily doped n-type material as its drift region

A. IMPATT diode

B. TRAPATT diode

C. TUNNETT diode

D. MITATT

422. A device containing more than one diode. An example is the full-wave bridge-rectifier integrated circuit.

A. diode array

B. diode IC

C. diode pack

D. combined diode

423. Is the combination of the inductance of the leads and electrodes, capacitance of the junction, and the resistance of the junction of a semiconductor diode.

A. diode impedance

B. diode ac resistance

C. diode reactance

D. diode ac parameter

424. In a reverse-biased pn junction, the sudden large increase in current that occurs when a particular value of reversed voltage is reached, and which is due to ionization by the high intensity electric field in the depletion region.

A. Zener effect

B. Hall effect

C. breakdown voltage

D. ionization

425. The appearance of RF current oscillations in a dc-biased slab of n-type gallium arsenide in a 3.3 kV electric field

A. Gunn effect

B. Hall effect

C. Zener effect

D. avalanche

426. The impedance presented by a junction operating in its zener breakdown region.

A. diode impedance

B. zener impedance

C. breakdown impedance

D. critical impedance

427. A curve showing the relationship between the voltage and the current of the diode at any given temperature

A. characteristic curve

B. transfer curve

C. transfer characteristic curve

D. all are correct

428. The line that is plotted in the diode characteristic curve which represents the load

A. linear line

B. operating line

C. load line

D. transfer load line

429. Diode is said to be operating at a point where the characteristic curve and the load line intersect. This point is technically termed as

A. Q-point

B. operating point

C. quiescent point

D. all are correct

430. What will happen to the magnitude of the load-line slope when the load resistance is decreased?

A. it will also decrease

B. it will increase

C. it will increase exponentially

D. is not affected by the load

431. Quiescent or Q-point position is dependent on

A. the supply voltage

B. the load resistance

C. the type of diode

D. all of the above

432. A germanium diode is connected to a load resistance of 1.5 kΩ and is supplied with 12-V such that the diode will be forward biased. What is the voltage across the diode?

A. approximately 12 V

B. approximately 0.7 V

C. approximately 0.3 V

D. lack of data and can’t be solved

433. What is the drop across the diode when it is connected in series to a resistor of 1.8 kΩ and a supply voltage of 50 V. The supply voltage causes the diode to be reverse-biased.

A. 50 V

B. 0.7 V

C. 0.3 V

D. can not be solve, lack of data

434. Two germanium diodes are connected in series and have a load resistance of 10 kΩ and a forward supply voltage of 5 V. Calculate the voltage across the load resistor.

A. 4.7 V

B. 4.4 V

C. 0.6 V

D. 0.3 V

435. A silicon diode is in parallel with a germanium diode and is connected to a load resistor having a value of 20 kΩ and a forward supply voltage of 10 V. What is the approximate voltage across the silicon diode?

A. 10 V

B. 1.0 V

C. 0.7 V

D. 0.3 V

436. What is the output voltage across a load resistor if it is paralleled with a forward biased silicon diode? The resistor network is supplied with 10 V.

A. 0.7 V

B. 9.3 V

C. 10 V

D. Can’t be solve, lack of data.

437. Diode circuit that is used to cut a portion of the input signal

A. clipper

B. clamper

C. peak detector

D. level shifter

438. A clipper circuit wherein the diode is connected in series with the load

A. series clipper

B. parallel clipper

C. shunt clipper

D. series feed clipper

439. What do you call a clipper circuit wherein the diode is shunted with the load?

A. series clipper

B. parallel clipper

C. cascade clipper

D. cascade clipper

440. A network with a diode and a capacitor that is used to shift the dc-level of the input signal

A. clipper

B. clamper

C. shifter

D. level inverter

441. Half-wave rectifier is a good example of

A. a series clamper

B. a parallel clamper

C. a parallel clipper

D. a series clipper

442. Which of the given circuit below must have a capacitor?

A. rectifier

B. clipper

C. clamper

D. all of the above

443. How many capacitors are used in a diode-capacitor half- wave voltage doubler?

A. 1

B. 2

C. 3

D. 4

444. An improvement of a diode-capacitor half-wave voltage doubler is the full-wave doubler, this circuit uses how many capacitors?

A. 1

B. 2

C. 3

D. 4

445. In a diode-capacitor voltage quadrupler, what is the voltage across the third stage capacitor?

A. Vmax

B. 2 Vmax

C. 3 Vmax

D. 4 Vmax

446. A combination of several diodes in a single housing

A. diode array

B. diode network

C. diode IC

D. diode matrix

447. A chopper, employing an alternately biased diodes as the switching element.

A. diode chopper

B. active chopper

C. junction chopper

D. all are correct

448. A light emitting diode (LED) is to be used in a circuit with a supply voltage of 5 V. What should be the value of the resistor needed by the LED to operate normally?

A. 25 Ω

B. 250 Ω

C. 25 kΩ

D. 250 kΩ

449. A simple voltage-regulator whose output is the constant voltage drop developed across a zener diode conducting in the reverse breakdown region. The regulator circuit consists of a zener diode in parallel with the load and an appropriate limiting resistor.

A. ordinary voltage regulator

B. zener voltage regulator

C. series voltage regulator

D. switching voltage regulator

450. Logic circuitry in which a diode is the logic element and a transistor acts as an inverting amplifier.

A. RTL

B. DTL

C. HDTL

D. ECL

Questions and Answers in Solid State Devices

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Complete List of MCQ in Electronics Engineering per topic