MCQ in Solid State Devices Part 10 | ECE Board Exam

(Last Updated On: August 9, 2018)

This is the Multiples Choice Questions Part 10 of the Series in Solid State Devices/Circuits as one of the Electronics Engineering topic. In Preparation for the ECE Board Exam make sure to expose yourself and familiarize in each and every questions compiled here taken from various sources including but not limited to past Board Exam Questions in Electronics Engineering field, Electronics Books, Journals and other Electronics References.

MCQ Topic Outline included in ECE Board Exam Syllabi

• MCQs in Semiconductor Fundamentals
• MCQs in Transistor Components
• MCQs in Circuit Analysis and Design
• MCQs in Special Services (Photo Electric, Photo voltaic)

Continue Practice Exam Test Questions Part 10 of the Series

Choose the letter of the best answer in each questions.

451. What is a bridge rectifier having diodes in two arms and resistors in the other two?

A. full-wave bridge

B. half-wave bridge

C. half-bridge

D. full bridge

452. An over-voltage protection circuit employing a zener diode and an SCR whose function is to produce high overload by-pass current on a circuit.

A. regulator

B. current enhancer

C. crowbar

D. shunted zener

453. The flow of electron in a NPN transistor when used in electronic circuit is from _______.

A. collector to base

B. collector to base

C. emitter to collector

D. base to emitter

454. A three terminal, three layer semiconductor device that has the ability to multiply charge carriers. This device was first introduced at Bell Laboratories, by Brattain and Bardeen in 1947 and which opens a completely new direction of interest and development in the field of electronics.

A. triode

B. triac

C. SCR

D. transistor

455. An active semiconductor device, capable of amplification, oscillation, and switching action. It is an acronym for transfer resistor and had replaced the tube in most applications.

A. thyristor

B. thyrector

C. SBS

D. transistor

456. Transistor replaces the old vacuum tubes because it has several obvious advantages, what are they?

A. smaller, lightweight and rugged construction

B. no heater loss, low operating voltage and therefore efficient

C. low power consumption and low power dissipation

D. all of these

457. Which of the three regions/areas in a transistor that is the smallest in construction?

A. emitter

B. collector

C. base

D. all are equal

458. The region or area in a transistor that is heavily doped

A. at the junction

B. emitter

C. collector

D. base

459. A transistor in which the base is diffused and the emitter is alloyed. The collector is provided by the semiconductor substrate into which alloying and diffusion are affected.

A. alloy-transistor

B. alloy-diffused transistor

C. alloy junction transistor

D. diffused junction transistor

460. A transistor whose junctions are created by alloying

A. alloy transistor

B. alloy-diffused transistor

C. diffused transistor

D. alloy junction

461. In a semiconductor device, a p-n junction formed by alloying a suitable material such as indium with the semiconductor.

A. alloy junction

B. diffused junction

C. depletion junction

D. storage junction

462. A transistor in which one or both electrodes are created by diffusion

A. diffused transistor

B. alloy transistor

C. planar transistor

D. mesa transistor

463. A two-junction transistor whose construction takes the form of a pnp or a npn. Such device uses both electron and hole conduction and is current-driven.

A. bipolar transistor

B. unipolar transistor

C. bi-directional transistor

D. double junction transistor

464. The predecessor of the junction transistor, and is characterized by a current amplification factor, alpha of greater than one.

A. surface-charge transistor

B. surface-barrier transistor

C. schottky transistor

D. point-contact transistor

465. For a transistor, the outer layers are

A. lightly doped semiconductors

B. heavily doped semiconductors

C. no doping at all

D. A and B above

466. The ratio of the total width of the outer layers to that of the center layer

A. 100:1

B. 150:5

C. 150:1

D. 1:150

467. The ratio of the doping level of the outer layers to that of the sandwiched material

A. 10:3 or more

B. 10:2 or more

C. 10:3

D. 10:1 or less

468. Limiting the number of “free” carriers will

A. increase the conductivity but decreases the resistance

B. decrease the conductivity but increases the resistance

C. increase the conductivity as well as resistivity

D. decrease the conductivity as well as resistivity

469. The term __________ reflects the fact that holes and electrons participate in the injection process into the oppositely polarized material.

A. unipolar

B. bipolar

C. tetrode

D. pentode

470. What device, that employs only electron or hole?

A. unipolar

B. bipolar

C. tetrode

D. pentode

471. At forward-biased junction of pnp transistor, majority carriers flow heavily

A. from p- to the n-type material

B. from n- to the p-type material

C. from p- to p-type material

D. A and B above

472. The minority-current component of a transistor is called

A. leakage current

B. emitter current

C. cut-off current

D. all of the above

473. For general-purpose transistors, IC is measured in _________, while I_CO is measured in ________.

A. micro and nanoamperes

B. milliamperes and microamperes

C. milliamperes and nanoamperes

D. b and c above

474. Is temperature sensitive, and can severely affect the stability of the system, when not carefully examined during design

A. I_C

B. I_CO

C. I_S

D. I_E

475. For the transistor, the arrow in the graphic symbol defines the direction of ____________ through the device

A. leakage current flow

B. emitter electron flow

C. majority carrier flow

D. emitter conventional current flow

476. In the dc mode, the levels of I_C and I_E due to the majority carriers are related by the quantity

A. alpha (α)

B. beta (β)

C. gamma (γ)

D. A and B above

477. In the ac mode, alpha α is formally called

A. common-base, short-circuit, amplification factor

B. common-emitter, amplification factor

C. common-collector, amplification factor

D. all of the above are correct

478. Phrases “not pointing in” and “pointing in” simply mean

A. npn and pnp

B. pnp and npn

C. npn only

D. pnp only

479. In the dc mode, the levels of I_C and I_B are related by a quantity called

A. α

B. β

C. γ

D. A and B above

480. For practical transistor devices, the level of β typically ranges

A. from about 25 to over 400

B. less than 1

C. mostly in midrange of 50 to 400

D. A or C above

481. The formal name of βac

A. Common-collector reverse-current amplification factor

B. Common-collector forward-current amplification factor

C. Common-emitter forward-current amplification factor

D. Common-emitter reverse-current amplification factor

482. It is a particularly important parameter that provides a direct link between current levels of the input and output circuits for a common-emitter configuration.

A. α

B. β

C. A and B above

D. none of these

483. The __________ id defined as that area below I_C = I_CEO.

A. active region

B. cutoff region

C. saturation region

D. none of the above

484. It is referred to as the communication link between the manufacturer and user

A. specification sheet

B. characteristic manual

C. characteristic curve

D. all of the above

485. The information that can be found in most specification sheets?

A. maximum ratings

B. thermal characteristics

C. electrical characteristics

D. all of the above

486. With an ohmmeter, a large or small resistance in either junction of an npn or pnp transistor indicates

A. faulty device

B. well functioning device

C. leaky device

D. either A or C

487. At base-emitter junction, using an ohmmeter, if the positive (+) lead is connected to the base and the negative (-) lead to the emitter, a low resistance reading would indicate

A. npn transistor

B. pnp transistor

C. germanium transistor

D. silicon transistor

488. At base-emitter junction, if the positive (+) lead is connected to the base and the negative (-) lead to the emitter, a high resistance reading would indicate

A. npn transistor

B. pnp transistor

C. germanium transistor

D. silicon transistor

489. Transistors of heavy duty construction

A. high-power devices

B. low-power devices

C. medium-power devices

D. all of the above

490. On a voltage-current condition curve, the point belong to which a further increase in voltage produces no (or very little) further increase in current.

A. saturation flux

B. saturation value

C. saturation point

D. all of the above

491. It is applied to any system where levels have reached their maximum values

A. saturation

B. active

C. cutoff

D. quiescent point

492. For an “on” transistor, the voltage VBE should be in the neighborhood of

A. 0.3 V

B. 0.55 V

C. 0.7 V

D. 1.7 V

493. Among the three characteristics of a transistor amplifier, which region is normally employed for linear (undistorted) amplifiers?

A. active region

B. cutoff region

C. saturation region

D. capital region

494. In the active region, the collector-base junction is ________, while the base-emitter junction is ________.

A. forward and forward-biased

B. forward and reverse-biased

C. reverse and reverse biased

D. reverse and forward-biased

495. It is necessary, in order to establish the proper region of operation for ac amplification.

A. ac biasing

B. dc biasing

C. A and B above

D. none of the above

496. At cutoff region, the collector-base and base-emitter junctions of a transistor are

A. both reverse-biased

B. forward and reverse-biased

C. both forward-biased

D. reverse and forward-biased

497. In saturation region, the collector-base and base-emitter junctions of a transistor are

A. both reverse-biased

B. forward and reverse-biased

C. both forward-biased

D. reverse and forward-biased

498. If the base-emitter junction is reverse biased and the base-collector junction is forward biased, the transistor will be at what region of operation?

A. active region

B. cut-off region

C. saturation region

D. breakdown region

499. Under what region does the transistor operate if both the base-emitter and base-collector junctions are reverse-biased?

A. active region

B. cut-off region

C. saturation region

D. breakdown region

500. What region the transistor should be operating to have minimum distortion at the output signal?

A. active region

B. cut-off region

C. saturation region

D. none of the above

Questions and Answers in Solid State Devices

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Complete List of MCQ in Electronics Engineering per topic